Impact of Pr on the properties of InP based layers for light sources and detectors

Abstract

We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 1014 cm–3. Three types of p‐n junction based radiation detection structures were prepared and their detection performance was assessed by using α‐particles emitted from the 241Am radioactive source. The type III structure, utilizing the p‐n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. Pr admixture was also exploited in the preparation of quaternary GaInAsP(Pr) active region in the double heterostructure GaInAsP/InP emitting at 1200 nm. Purification effect of Pr addition is demonstrated by measuring impurity concentrations deduced from C‐V curves and by low temperature PL spectra. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

“…Spectra of α-particles from the 241 Am source of 5.48 MeV were measured at room temperature in vacuum with negative voltage on the irradiated (p-type InP) side. The highest achieved CCE was 40 % with FWHM energy resolution of 8 % (Procházková et al, 2009). …”