Preparation of MoS₂–MoO₃ Hybrid Nanomaterials for Light‐Emitting Diodes

Abstract

A facile strategy to prepare MoS2 -MoO3 hybrid nanomaterials is developed, based on the heat-assisted partial oxidation of lithium-exfoliated MoS2 nanosheets in air followed by thermal-annealing-driven crystallization. The obtained MoS2 -MoO3 hybrid nanomaterial exhibits p-type conductivity. As a proof-of-concept application, an n-type SiC/p-type MoS2 -MoO3 heterojunction is used as the active layer for light-emitting diodes. The origins of the electroluminescence from the device are theoretically investigated. This facile synthesis and application of hybrid nanomaterials opens up avenues to develop new advanced materials for various functional applications, such as in electrics, optoelectronics, clean energy, and information storage.

Layered MoS2nanoparticles on TiO2nanotubes by a photocatalytic strategy for use as high-performance electrocatalysts in hydrogen evolution reactions

“…23 The peaks at 232.2 and 235.6 eV are ascribed to the Mo 3d 3/2 and 3d 5/2 orbits in +6 oxidation state resulting from the formation of MoO 3 on the surface of TiO 2 -NTs. 35 The characteristic peaks of S 2s, 2p 1/2 and 2p 3/2 orbit for S 2-are observed at 226.7, 162.9 and 161. which indicates a high electrocatalytic activity of our electrodes.…”

2D Layered Materials of Rare‐Earth Er‐Doped MoS2 with NIR‐to‐NIR Down‐ and Up‐Conversion Photoluminescence

“…Formation of 2D forms is promised by the in‐plane stability of monolayers supplied by strong covalent bonds. The study of photoluminescence (PL) properties in the single‐ and few‐layer 2D layers has become an important research focus . For instance, in 2D transition metal dichalcogenides (TMDs) such as MoS 2 , MoSe 2 , WS 2 , and WSe 2 , PL measurements have provided experimental evidences to prove the exotic nature of excitons in TMDs .…”

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

“…The TMD layers were prepared on a SiO 2 /Si substrate by a mechanical exfoliation method. As a result, this approach offers many opportunities for researches in various devices, including transistors, [17][18][19] photodetectors, [ 20,21 ] light-emitting diodes, [22][23][24] and solar cells. As shown in Figure 1 a, the pristine ReSe 2 sample (gray solid line) had two peaks near 125 and 160 cm −1 , which indicate E g -like and A g -like Raman peaks, respectively.…”

“…This red-shifting phenomenon of the Raman peaks (E g -like: −0.78 cm −1 and A g -like: −1.29 cm −1 ) seems to be attributed to the n-doping of ReSe 2 . As a result, this approach offers many opportunities for researches in various devices, including transistors, [17][18][19] photodetectors, [ 20,21 ] light-emitting diodes, [22][23][24] and solar cells. [ 40,41 ] This n-doping effect by the PPh 3 was also confi rmed in the MoS 2 samples, as shown in Figure 1 c,d.…”