Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density

Kliefoth, K.; Flietner, H.

doi:10.1016/s0169-4332(96)00128-6

Cited by 39 publications

(19 citation statements)

References 13 publications

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“…78 are generally consistent with other investigations of Flietner et al [717,718,720,721,723], as well as with the earlier analyses of Allen and Gobeli [710], Yamagishi [572], and Lam [716]. All of these show that well-passivated Si surfaces feature a`U-shaped' distribution of surface states, which is typically symmetric about midgap.…”

Section: Energy Distributionsupporting

confidence: 90%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,515

804

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Section: Energy Distributionsupporting

confidence: 90%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,515

804

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“…Single crystalline wafer pieces ͑n type, ͓P͔Ϸ10 15 cm Ϫ3 ͒ were chemically cleaned prior to deposition according to the following procedure which is similar to Ref. 13: First, the wafer pieces were precleaned in ethanole and then in a fresh solution ͑1:1͒ of concentrated sulfuric acid and hydrogen peroxide ͑30%͒. Second, the protective 100-nm-thick thermal oxide was stripped by an etch in buffered hydrofluoric acid (pHϭ5.5) and the Si surface reoxidized in a sulfuric acid/hydrogen peroxide solution.…”

Section: A Substrate Preparationmentioning

confidence: 99%

Dipole formation and band alignment at the Si(111)/CuInS2 heterojunction

Hunger¹,

Pettenkofer²,

Scheer³

2002

Journal of Applied Physics

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Heterojunctions between Si(111):H faces and molecular beam epitaxy grown CuInS2 thin films were investigated. The interface formation was studied by means of photoelectron spectroscopy and low energy electron diffraction. Initial sulfur exposure of the Si substrate at 750 K leads to a surface dipole of (0.61±0.10) eV. Upon subsequent CuInS2 deposition, an interface dipole of (1.0±0.2) eV is observed. The valence band offsets between Si and CuInS2 films of different [Cu]/[In] ratios were determined and an average valence band offset of (0.08±0.15) eV is obtained. Comparison with model considerations points out that the experimental values of the valence band offset are consistent with the observed interface dipole.

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“…For n-type Si(111)-H, an accumulation layer was measured. [44][45][46] Thus, the drift of electrons is expected toward the surface ( Figure 5). For p-type Si(111)-H, an inversion layer was measured.…”

Section: Resultsmentioning

confidence: 99%

Photoreactivity of Si(111)−H in Ambient

Bodlaki

Borguet

2006

J. Phys. Chem. C

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Second harmonic generation rotational anisotropy (SHG-RA) provides a convenient means to monitor the chemical state of the Si surfaces and to follow the conversion of a H-terminated surface to SiO 2 by oxidation as a function of time in ambient. SHG at 800 nm is sensitive to changes in the surface electronic properties induced by oxidation, and it probes both the initial stage of oxidation and the logarithmic oxide growth. We found that intense, ultrashort (4 ps) 800 nm laser pulses accelerate the initial stage of oxidation of Si( 111)-H in ambient. The cross-section of the photoinduced process was found to be (1.7 ( 0.5) × 10 -23 cm 2 . A mechanism involving drift of photoexcited electrons toward the surface is proposed to explain the photooxidation.

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Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density

Cited by 39 publications

References 13 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

Dipole formation and band alignment at the Si(111)/CuInS2 heterojunction

Photoreactivity of Si(111)−H in Ambient

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