The E(k) behaviour is calculated for a two-band scheme as an approximation for the vicinity of the forbidden gap of a semiconductor. An estimate is given for the validity of the effective mass approximation in the forbidden gap. Application is made to the metal-semiconductor contact and it is shown that this model describes the experiments for semiconductors ranging from covalent to the ionic type.Der E(k)-Verlauf wird berechnet fur das Zweibandmodell eines Halbleiters als Niiherung fur die Umgebung der verbotenen Zone. Eine Abschatzung fiir die Gultigkeit der Effektivmassen-Approximation in der verbotenen Zone wird angegeben. Die Anwendung auf den Metall-Halbleiter-Kontakt zeigt, daB durch dieses Model1 die Experimente fur Halbleiter vom kovalenten bis zum ionischen Typ gut wiedergegeben werden.
The electrochemical H-termination process of n-Si(111) surfaces in aqueous 0.1 M NH4F pH 4.0 solution was optimized for a two step procedure consisting of the surface smoothing during oxidation in the photocurrent oscillating potential region followed by the oxide etching and passivation of the surface atoms with hydrogen. The hydrogen termination was monitored in situ measuring the dark current transient and evaluated using pulsed surface photovoltage technique. An unusually low density of interface states it=1×1010 eV−1 cm−2 was obtained by the hydrogen termination on n-Si(111) surfaces following this procedure with better results than applying an electropolishing treatment.
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