2002
DOI: 10.1016/s0169-4332(02)00405-1
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Preparation of double layer film of boron and carbon by pulsed laser deposition

Abstract: Double layer films of boron and carbon were prepared by pulsed laser deposition (PLD) on silicon substrates. The film surface morphology was examined by atomic force microscopy (AFM). The chemical composition of the elements, carbon, boron, silicon and oxygen, and bonding state of carbon atoms as a function of the depth from the film surface were analyzed by X-ray photoelectron spectroscopy (XPS) with argon ion sputtering technique. Carbon atoms bonded to boron (C-B) were observed as well as carbon atoms bonde… Show more

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Cited by 14 publications
(4 citation statements)
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“…In this regard, the PLD technique has come up as one of the most popular and effective techniques utilized in the present days for depositing multi component thin films directly from solid target material with assured stoichiometry using the control of energy of the ablated material [10] and thus may be a viable alternate route for depositing BSb films.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In this regard, the PLD technique has come up as one of the most popular and effective techniques utilized in the present days for depositing multi component thin films directly from solid target material with assured stoichiometry using the control of energy of the ablated material [10] and thus may be a viable alternate route for depositing BSb films.…”
Section: Resultsmentioning
confidence: 99%
“…A c c e p t e d M a n u s c r i p t 10 The lower temperature deposited films are denser than those deposited at higher temperatures (Fig.4a). The refractive indices (n) also varied (Fig.4a) from 4.0 to 4.5 with the wavelength in the range of 500-3000 nm for the films deposited for this study.…”
Section: Page 10 Of 26mentioning
confidence: 95%
“…7c). [31][32][33][34] Whereas the narrow spectrum of C1s has three peaks, one at 284.6 eV that corresponds to C-strong bond, at 286.3 eV that was due to C-N, C=N, [33][34][35][36] and at 288.3 eV corresponding to C-N, C-O or C=O bond were present [36][37][38] and at 281.9 eV corresponding to TiC, [39][40][41] shown in Fig. 7d.…”
Section: Microstructure and Mechanical Properties Of Ti-si-b-c-n Filmsmentioning
confidence: 99%
“…PAPLD has been described in detail in our previous reports [5][6][7][8][9][10][11]. Briefly, the PLD chamber which contains a substrate-holder and six target-holders is evacuated up to 2.0 Â 10 À 8 Torr.…”
Section: Experimental Setup and Proceduresmentioning
confidence: 99%