Synthesis and characterization of boron antimonide films by pulsed laser deposition technique

Optical properties and electronic polarizability of boron-antimonide semiconductor

“…The difference between our results and the theoretical values reported in Refs [11][12][13][14][15][16] and also with the experimental one reported in Ref. [10] is mainly due to the different expressions proposed to calculate these parameters. The total optical electronegativity difference ΔX * and the highfrequency dielectric constant   are related by the following empirical formula [17]   ].…”

“…However, it is found that the experimental data [10] are very higher than our results, and all theoretical data reported in Refs. [11][12][13][14][15][16].…”

“…The total optical electronegativity difference ΔX * and the highfrequency dielectric constant   are related by the following empirical formula [17]   ]. Using the experimental energy gap Eg = 0.55 eV [10] of thin films cubic zincblende boron-antimonide semiconductor, the total optical electronegativity difference ΔX * of this material is found to be 0.1474. Replacing this value in the empirical formula of Eq.…”

“…(1), and they were found to be 8.8 and 11.53 respectively. Our calculated values of ɛ∞ and ɛ0 are listed in Table 1 and compared with the available experimental [10] and theoretical [11][12][13][14][15][16] data in the literature. At given optical frequency, the dielectric constant ε and the refractive index n are related with the following expression [12], [17] n …”

“…(2). Our calculated values of n∞ and n0 are also listed in Table 1 and compared with the available experimental [10] and theoretical [11][12][13][14][15][16] data in the literature. As can be seen from Table 1, our calculated values; ɛ∞, ɛ0, n∞, and n0 are generally in reasonable agreement with the previously theoretical data reported in Refs.…”