Preparation of Cu(In,Ga)Se2 layers by selenization of electrodeposited Cu–In–Ga precursors

Ganchev, M.; Kois, J.; Kaelin, M.; Bereznev, Sergei; Tzvetkova, E.; Volobujeva, Olga; Stratieva, N.; Tiwari, Ayodhya N.

doi:10.1016/j.tsf.2005.11.076

Cited by 70 publications

(38 citation statements)

References 15 publications

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“…The absorber composition was: Cu/(In+Ga)=0.8; Ga/(In+Ga)=0.37, which is comparable to the best efficiency CIGS solar cells. Efficiency achieved in this study is comparable to previous devices based on Cu-In-Ga electrodeposition in a high complexing media, that demonstrate 4.35% efficiency (6). These results are promising, considering the nanostructured absorber, that induces a highly developed interface, so higher recombination probability through interface defects: high efficiency improvement is expected when optimizing the morphology.…”

Section: Ecs Transactionssupporting

confidence: 74%

“…To achieve co-deposition, strong complexing or diffusion-control of Cu, and, in a least extent, of In, is necessary, to be able to deposit the three species at one potential. Cu-In-Ga layers of graded composition electrodeposited from complex thiocyanate electrolyte have already been investigated (6). In this study, simple aqueous baths without complexing agent are studied first.…”

Section: Introductionmentioning

confidence: 99%

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One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se₂ Absorber Synthesis for Solar Cells

Ribeaucourt¹,

Chassaing²,

Savidand³

et al. 2010

ECS Trans.

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Cu-In-Ga electrodeposition on Mo substrate is carried out in acidic aqueous media. Subsequent selenization leads to Cu(In,Ga)Se2 absorber for thin film solar cells. First, conditions to achieve one-step Cu-In-Ga electrodeposition are analysed. Then, Cu-In and Cu-Ga systems are studied. Cu-In electrodeposition is realized under diffusion-control conditions. For Cu-Ga system, first Cu(II) diffusion-controlled reduction occurs, followed by kinetic under-potential deposition (UPD) of Ga, leading to the formation of CuGa2 compound. Finally Cu-In-Ga electrodeposition is investigated. For Cu-In-Ga system, CuGa2 compound is not noticed, Ga-O codeposition is favored. In presence of citrate, Ga metal is deposited without oxide. Cu(II) and In(III) reductions are both diffusion-controlled, and Ga(III) kinetically controlled, allowing composition control at fixed pH and potential, but with dendritic growth. After selenization, complete Ga insertion is noticed in the formed chalcopyrite absorber. Solar cells with 4% efficiency were achieved despite porous morphology of the absorber.

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Section: Ecs Transactionssupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se₂ Absorber Synthesis for Solar Cells

Ribeaucourt¹,

Chassaing²,

Savidand³

et al. 2010

ECS Trans.

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“…The presence of cracks in Ga-containing layers is often a serious problem [39,47], though it can be reduced through the use of alcohol-aqueous solutions [48] or supporting electrolytes such as LiCl or Li 2 SO 4 with gelatin as brightening additive [49]. Complexing agents such as citric acid/citrate [50,51], thiocyanate [52], sodium sulfamate [53], sulfosalicylic acid [54], etc., were often used to improve the composition and morphology of the CIGS films. These additives form complexes with the metal ions in the solution such as Cu, thereby resulting in controlled deposition rates and hence the morphology [55,56].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

“…Deposition of Cu-Ga [60] and Cu-In-Ga [52] alloys has been demonstrated, with the latter approach leading to 4% efficiency cells. Solopower explored the layer by layer electrodeposition to form stoichiometric CIGS thin-films [21].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

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“…A complete single-phase CIGSe is formed by the slow interdiffusion between CISe and CGSe at high temperature along with the Ga accumulation towards the back contact. The problem of Ga segregation towards the back contact in the CIGSe absorbers during selenization process is widely reported [90]. They tend to create an insufficient energy bandgap at the SCR, which leads to poor V OC .…”

Section: Compositional Tuning To Avoid Micro-cracksmentioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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Thin-film solar cell devices based on copper indium gallium diselenide (CIGSe) chalcogenide materials fabricated by vacuum-based deposition techniques have already achieved lab scale efficiency beyond 21%. For industrial-scale applications, non-vacuum deposition technique such as electrodeposition and screen printing is considered to be suitable approaches for reducing the device fabrication cost. Moreover, electrodeposition has the potential to prepare large area thin films as it requires cheap raw material sources and equipment capital. Hence, it is imperative to understand the current status and advancements in the electroplating techniques of the CIGSe thin films. This article reviews on the experimental advances in electroplating of ternary CuInSe 2 and quaternary CIGSe. Various approaches in electrodeposition, influential experimental parameters, and the deposition mechanisms which are related to the final cell efficiency are discussed in detail.

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Preparation of Cu(In,Ga)Se2 layers by selenization of electrodeposited Cu–In–Ga precursors

Cited by 70 publications

References 15 publications

One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se₂ Absorber Synthesis for Solar Cells

One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se₂ Absorber Synthesis for Solar Cells

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

A short review on the advancements in electroplating of CuInGaSe2 thin films

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Preparation of Cu(In,Ga)Se2 layers by selenization of electrodeposited Cu–In–Ga precursors

Cited by 70 publications

References 15 publications

One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se2 Absorber Synthesis for Solar Cells

One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se2 Absorber Synthesis for Solar Cells

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

A short review on the advancements in electroplating of CuInGaSe2 thin films

Contact Info

Product

Resources

About

One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se₂ Absorber Synthesis for Solar Cells

One-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se₂ Absorber Synthesis for Solar Cells