Preparation of Cd0.8Zn0.2Te/Cd0.5Zn0.5Te/n+-GaAs thick film radiation detectors by close spaced sublimation

Cao, Kun; Zha, Gangqiang; Zhang, Hao; Wang, Aoqiu; Li, Yang; Wan, Xin

doi:10.1016/j.vacuum.2021.110426

Cited by 6 publications

(1 citation statement)

References 37 publications

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“…As an II-VI semiconductor material, cadmium zinc telluride (CdZnTe) compound which has wider band-gap and high atomic number, is excellent for radiation detectors 1,2 . Now, the challenge to enhancing the efficiency and practicality of CdZnTe semiconductor devices is the difficulty in obtaining high-quality CdZnTe films [3][4][5] .Hence, a lot of research has been done to raise the quality of the film layer, which will then further improve device performance. The lattice mismatch and thermal expansion coefficient mismatches between CdZnTe films and the usually employed substrate materials, such glass, silicon, limit the formation of higher-quality CdZnTe films [6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

The effects of metal catalytic layer on the performance of CdZnTe thick film

Lina,

Li,

Huang

et al. 2024

Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023)

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CdZnTe thick films were prepared by using close-spaced sublimation (CSS) method. The effects of metal catalytic layer on the performance of CdZnTe thick film was examined. The findings demonstrate that the Au catalytic buffer layer, in comparison to the Al metal layer, significantly affects the growth rate, grain size, and surface morphology of the CdZnTe thick film. The properties of the CdZnTe thick film is considerably impacted by the thickness of the Au layer.

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