“…As an II-VI semiconductor material, cadmium zinc telluride (CdZnTe) compound which has wider band-gap and high atomic number, is excellent for radiation detectors 1,2 . Now, the challenge to enhancing the efficiency and practicality of CdZnTe semiconductor devices is the difficulty in obtaining high-quality CdZnTe films [3][4][5] .Hence, a lot of research has been done to raise the quality of the film layer, which will then further improve device performance. The lattice mismatch and thermal expansion coefficient mismatches between CdZnTe films and the usually employed substrate materials, such glass, silicon, limit the formation of higher-quality CdZnTe films [6][7][8] .…”