The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation

Cheng, Renying; Zha, Gangqiang; Cao, Kun; Zhang, Hao; Wan, Xin; Wei, Heming; Jiang, Ran; Liu, Jiahu; Liu, Yu; Tian, Xue; Tan, Tingting; Chen, Donglei

doi:10.1016/j.jcrysgro.2023.127303

Journal of Crystal Growth

2023

DOI: 10.1016/j.jcrysgro.2023.127303

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The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation

Renying Cheng,

Gangqiang Zha,

Kun Cao

et al.

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2024

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Cited by 2 publications

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Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Liu,

Wu,

Zhang

et al. 2024

Applied Surface Science

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Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Liu,

Wu,

Zhang

et al. 2024

Applied Surface Science

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Formation mechanism and elimination of needle defects on CdZnTe epitaxial films prepared by close-spaced sublimation

Cheng,

Cao,

Zha

et al. 2024

Applied Surface Science

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The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation

Cited by 2 publications

References 60 publications

Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Formation mechanism and elimination of needle defects on CdZnTe epitaxial films prepared by close-spaced sublimation

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