Preparation of Bi4Ti3O12 Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure

Kijima, Takeshi; Matsunaga, Hironori

doi:10.1143/jjap.38.2281

Cited by 56 publications

(29 citation statements)

References 10 publications

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“…E C decreases with increasing thickness. This behavior is [52][53][54] and Bi 4 Ti 3 O 12 , [55][56][57][58][59][60][61] and HfO 2 9,12) and our results.…”

Section: Resultssupporting

confidence: 78%

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

Migita

Ota

Yamada

et al. 2018

Jpn. J. Appl. Phys.

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The electrical properties of ferroelectric Hf-Zr-O ultrathin films, particularly the dependences of remnant polarization, leakage current, coercive field, and breakdown field on the metal composition and film thickness, are systematically examined. Physical analyses show that the Hf-Zr-O films in this experiment consist of polycrystalline grains and contain both ferroelectric and dielectric phases. It is found that changes in metal composition and thickness strongly influence the remnant polarization and the leakage current simultaneously. In contrast, the coercive field was relatively unaffected by these parameters. This particular behavior of the coercive field suggests that the polarization switching in Hf-Zr-O films is predominantly determined by the nature of nanometer-scale ferroelectric domains dispersed in the films.

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“…E C decreases with increasing thickness. This behavior is [52][53][54] and Bi 4 Ti 3 O 12 , [55][56][57][58][59][60][61] and HfO 2 9,12) and our results.…”

Section: Resultssupporting

confidence: 78%

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

Migita

Ota

Yamada

et al. 2018

Jpn. J. Appl. Phys.

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“…[6] According to Kim et al [6] the dielectric constant for Bi 4 Si 3 O 12 is in the range 5±20, depending on thin-film thickness and annealing conditions. Heat treatment was found to increase the dielectric constant.…”

Section: Introductionmentioning

confidence: 99%

“…Bi 2 SiO 5 phases have been deposited with metal organic decomposition (MOD) [2,5,11] and metal-organic (MO)CVD. [1,4] Si(100) was used as the substrate in both methods, and the films in all these studies were found to be oriented in the (h00) direction with no additional phases observed. Interestingly, no silicon-containing precursor has been used in the MOCVD processes since the silicon substrate has served as the silicon source.…”

Section: Introductionmentioning

confidence: 99%

“…Interestingly, no silicon-containing precursor has been used in the MOCVD processes since the silicon substrate has served as the silicon source. Thus, a native oxide layer on Si substrates was removed and Bi 2 SiO 5 films were deposited from Bi(o-C 7 H 7 ) 3 and O 2 precursors at 500 C. [1,4] A silicate phase was assumed to form when Bi atoms diffuse into the silicon substrate. [4] Triphenyl bismuth together with oxygen as MOCVD precursors resulted in Bi 4 Si 3 O 12 thin films.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, a native oxide layer on Si substrates was removed and Bi 2 SiO 5 films were deposited from Bi(o-C 7 H 7 ) 3 and O 2 precursors at 500 C. [1,4] A silicate phase was assumed to form when Bi atoms diffuse into the silicon substrate. [4] Triphenyl bismuth together with oxygen as MOCVD precursors resulted in Bi 4 Si 3 O 12 thin films. [6,12] Films were deposited in the range 650-820 C. Si substrates were used, onto which a 100 nm [6] and 500 nm [12] SiO 2 layer was thermally grown.…”

Section: Introductionmentioning

confidence: 99%

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New Approach to the ALD of Bismuth Silicates; Bi(CH₂SiMe₃)₃ Acting as a Precursor for both Bismuth and Silicon

Harjuoja¹,

Hatanpää²,

Vehkamäki³

et al. 2005

Chemical Vapor Deposition

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Bismuth silicate thin films were deposited using atomic layer deposition (ALD) with a novel precursor, Bi(CH 2 SiMe 3 ) 3 , serving as both bismuth and silicon source. Precursor synthesis, analysis, and crystal structure are also reported. Bi(CH 2 SiMe 3 ) 3 forms hexagonal crystals with a = 10.7110(11) , b = 10.7110(11) , c = 10.2500(7) ; space group P6 3 . The deposition temperature of thin films was 200±450 C, where a constant growth rate of 0.4 per cycle was obtained between 250 C and 350 C. Impurity levels of bismuth silicate films deposited at 250 C were below 0.2 at.-% and 0.1 at.-% for carbon and hydrogen, respectively. The as-deposited films were amorphous, and post-synthetic annealing in an atmosphere of N 2 or O 2 at 400±1000 C was applied.

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Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

et al. 2023

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Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal‐oxide‐semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite‐structured oxides revived interest in the research on ferroelectric memories, by inducing nanoscale nonvolatility in state‐of‐the‐art gate insulators by minute doping and thermal treatment. The potential of this approach has been demonstrated by the fabrication of sub‐30 nm electronic devices. Nonetheless, to realize practical applications, various technical limitations, such as insufficient reliability including endurance, retention, and imprint, as well as large device‐to‐device‐variation, require urgent solutions. Furthermore, such limitations should be considered based on targeting devices as well as applications. Various types of ferroelectric memories including ferroelectric random‐access‐memory, ferroelectric field‐effect‐transistor, and ferroelectric tunnel junction should be considered for classical nonvolatile memories as well as emerging neuromorphic computing and processing‐in‐memory. Therefore, from the viewpoint of materials science, this review covers the recent research focusing on ferroelectric memories from the history of conventional approaches to future prospects.

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Preparation of Bi₄Ti₃O₁₂ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure

Cited by 56 publications

References 10 publications

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

New Approach to the ALD of Bismuth Silicates; Bi(CH₂SiMe₃)₃ Acting as a Precursor for both Bismuth and Silicon

Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

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Preparation of Bi4Ti3O12 Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure

Cited by 56 publications

References 10 publications

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

New Approach to the ALD of Bismuth Silicates; Bi(CH2SiMe3)3 Acting as a Precursor for both Bismuth and Silicon

Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

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Preparation of Bi₄Ti₃O₁₂ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure

New Approach to the ALD of Bismuth Silicates; Bi(CH₂SiMe₃)₃ Acting as a Precursor for both Bismuth and Silicon