Preparation of antiferroelectric PbZrxTi1−xO3 thin films on LaSrMnO3-coated steel substrates

Abstract

Antiferroelectric lead zirconate titanate (PZT) thin films have been prepared by chemical solution deposition using oxide powders. The films were processed onto steel substrates coated with a conducting oxide layer of LaSrMnO3. Homogeneous and uniform films up to 3.4 μm thick and with polarization saturation values up to 35 μC/cm2 have been obtained. The compositional transition from the ferroelectric to the antiferroelectric phase at the high zirconium side of the PZT phase diagram was studied by x-ray diffraction and hysteresis loop measurements as a function of the Zr/Ti ratio. Film thickness and annealing temperature dependencies are reported.

Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process

“…3,4 A single crystal substrate such as SrTiO 3 allows preferred orientation or even epitaxial PZ films to be grown, but no measurements were reported on the temperature dependent properties. [10][11][12] In this article we describe the sol-gel preparation of PbZrO 3 thin films with highly (001) pc preferred orientation, and the subsequent characterization of the dielectric properties as a function of film thickness and temperature. The electric field-induced switching behavior is also discussed.…”

Epitaxially grown ferroelectric thin films for agile devices

“…However, for other devices or complementary measurements the presence of a bottom electrode is often necessary. The most popular solution is the use of the classical Pt/TiO 2 /SiO 2 /Si heterostructure where the platinum electrode is textured, not epitaxied, while some groups proposed bulk metallic substrates, like stainless steel [57]. When epitaxial regrowth or precise microstructural orientation is needed, sublayers of conducting oxides like, for instance, SrRuO 3 [58] or LaNiO 3 [59] are frequently used.…”

Structure and dielectric tunability of (Pb0.5Ba0.5)ZrO3 thin films derived on (Sr0.95La0.05)TiO3 buffer-layered substrates

“…One kind was the binary metal oxide, such as TiO 2 , SiO 2 , MgO, CeO 2 and Ta 2 O 5 [11][12][13][14]. The other kind was the conductive ternary perovskite layer, such as LaNiO 3 , La 0.5 Sr 0.5 CoO 3 , La 0.3 Sr 0.7 MnO 3 , SrRuO 3 and La 0.07 Sr 0.93 SnO 3 [15][16][17][18]. Compared with the binary metal oxide, conductive perovskite layer was more attractive due to the following reasons: (i) it could be served as a bottom electrode because of its higher conductivity; (ii) it also functioned as a seed layer to induce the growth of subsequently deposited films at lower temperature.…”