Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process

Abstract

Articles you may be interested inDielectric properties of (110) oriented Pb Zr O 3 and La-modified Pb Zr O 3 thin films grown by sol-gel process on Pt ( 111 ) ∕ Ti ∕ Si O 2 ∕ Si substrate J. Appl. Phys. 100, 044102 (2006); 10.1063/1.2234819 Competition between ferroelectric and semiconductor properties in Pb ( Zr 0.65 Ti 0.35 ) O 3 thin films deposited by sol-gel J. Appl. Phys. 93, 4776 (2003); 10.1063/1.1562009Dielectric and ferroelectric properties of highly oriented ( Pb,Nb )( Zr,Sn,Ti ) O 3 thin films grown by a sol-gel process Appl.Antiferroelectric PbZrO 3 ͑PZ͒ films have been fabricated on LaNiO 3 /Pt/Ti/SiO 2 /Si substrates using a sol-gel process. The films with perovskite structure showed highly ͗001͘ preferred orientation. An antiferroelectric phase was identified by the presence of 1/4͕110͖ superlattice spots in a ͓001͔ selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 C/cm 2 . Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2 /Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

Critical Thickness for Antiferroelectricity inPbZrO3

“…The 2.5 nm thick film exhibits a typical FE hysteresis loop. The size evolution of the hysteresis loops is in excellent qualitative agreement with experimental measurements [7][8][9][10]14]. A quantitative comparison is not always possible due to a difference in films' thicknesses in computations and experiments.…”

“…The stability of the FE phase increases with the increase in the surface to volume ratio. Interestingly, such finding could explain the increase in the critical thickness in fine grain polycrystalline films [8] as compared to the single crystalline ones [9]. It also suggests that the effect could be even more pronounced in other low-dimensional structures, such as nanorods and nanodots, as they have larger surface to volume ratio.…”

“…It was proposed that the epitaxial strain stabilizes the FE phase. Interestingly, polycrystalline PbZrO 3 films exhibit FE-like single loop hysteresis at a larger thickness of 80 nm [8]. The thickness dependent behavior of the polycrystalline films was tentatively attributed to the interface layer between the film and electrode.…”

“…On the other hand, antiferroelectrics appear to demonstrate just the opposite behavior upon scaling down. More precisely, they were reported to develop a ferroelectric phase at the nanoscale [7][8][9][10][11]. It seems that the effects that arise at the nanoscale are capable of inducing a transition between the polar and antipolar phases of the same material.…”

Influence of long-range dipolar interactions on the phase stability and hysteresis shapes of ferroelectric and antiferroelectric multilayers

“…For example, the very well-known double-loops of PZ [32][33][34] corroborate the fact that the energy-minimizing mechanism that promotes the antiparallel distortions occuring in the crystal must be quite dominant over the long-range d-d term [35]. This must especially be the circumstance when the dipoles are constrained by the lattice to a certain orientation.…”