Preparation and some electrical properties of InP thin films

Abstract

In P n‐type films with thicknesses in the range of 0.1 to 1.2 μm were prepared using the three temperatures method. The electrical conductivities of these films were investigated as a function of the substrate temperature, Ts, and film thickness, d. Also the thickness dependences of the Hall coefficient, RH, and Hall mobility, μH, have been determined. At room temperature following data were obtained: carrier concentration n = 5 × 1016 to 2.5 × 1017 cm−3 and Hall mobility μH = 40 to 180 cm2/Vs. Values of the activation energy in the intrinsic conductivity region are calculated using the dependence ln σ = 𝒻(T−1) (ΔE = 1.24 to 1.32 eV). These values are in good agreement with values known for InP bulk crystals [4, 5, 24].

Two-source coevaporation technique for synthesis of indium phosphide films with controlled composition

“…Using the above values of ω p and m e *, the value of carrier concentration was estimated from Eq. (12). Carrier concentration thus evaluated was 19.51 × 10 24 m −3 for a representative InP film.…”

“…Among the different techniques, reported so far for the deposition of InP films, liquid phase epitaxy [6], sputtering [7], electrodeposition [8], spray pyrolysis [9], flash evaporation [10] and organic chemical vapor deposition [11] are worth mentioning. InP films were also deposited by threetemperature method by Rusu [12] while InP deposited/grown in different nanocrystalline forms (nanoparticles, nano wires, etc.) have been reported by others [13][14][15][16][17][18].…”