2012
DOI: 10.1016/j.jallcom.2012.03.119
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Two-source coevaporation technique for synthesis of indium phosphide films with controlled composition

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Cited by 5 publications
(2 citation statements)
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References 31 publications
(34 reference statements)
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“…1i) crystallite size of the coherently diffracting domains from the highest intensity (110) reection. 24 Table S1 † shows the increase in crystalline domain size with anti-solvent and QD modied lms, which further manifests the increase in grain size as also observed from Fig. 1d-f.…”
Section: Resultssupporting
confidence: 75%
“…1i) crystallite size of the coherently diffracting domains from the highest intensity (110) reection. 24 Table S1 † shows the increase in crystalline domain size with anti-solvent and QD modied lms, which further manifests the increase in grain size as also observed from Fig. 1d-f.…”
Section: Resultssupporting
confidence: 75%
“…3,4 It is also an important component of many electronic and optoelectronic materials, such as indium phosphide (InP), indium selenide, copper indium selenide (CIS), copper indium gallium selenide (CIGS), indium arsenide (InAs), indium gallium phosphide, and indium tin oxide. Many different fabrication techniques exist for these materials, some of the most common being closed space sublimation, 5 metal organic chemical vapor deposition, [6][7][8] co-evaporation, 9 and molecular beam epitaxy. 10,11 An alternative deposition method is electrochemical deposition [12][13][14][15][16][17][18][19][20][21] (ECD), which has the advantages of 13,22 (a) low temperature, ambient pressure deposition, (b) high deposition rate which is easily controllable, (c) low cost equipment and precursors, and (d) high material utilization (as high as 98%).…”
mentioning
confidence: 99%