Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature

Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering

“…Moreover, ZnO is chemically stable in hydrogen plasma that is commonly used in the fabrication of TFT-LCDs [10]. Although Al, Ga, In, Zr, B, and rare earth-doped ZnO films have been studied [3,[11][12][13][14][15], however, looking for new materials still remains interesting and attractive. To dope molybdenum into ZnO is quite attractive because there is a valence difference of four between Mo 6+ and Zn 2+ , one atom of dopant can contribute more electrons to the electrical conductivity.…”

Effects of H2 ambient annealing in fully 002-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

“…Published electrical resistivity, carrier concentration, mobility, and optical transmittance of polycrystalline ZnO:Ga thin films range from 2.58 Â 10 À2 to 1.4 Â 10 À4 V cm, 5.28 Â 10 19 to 5.51 Â 10 21 cm À3 , 0.669 to 54.2 cm 2 /V s, and approximately 70 to well above 90%, respectively [15][16][17]. Excellent electrical and transparent properties of high crystalline ZnO:Ga thin films grown on single crystal substrates had been reported [16,18,19].…”

The characteristics of transparent conducting Al-doped zinc oxide thin films deposited on polymer substrates

“…Several deposition techniques have been used to grow AZO films. Sputtering is considered to be a suitable technique for the preparation of AZO films, because it is inexpensive and offers good uniformity of deposition, over large areas [7].…”