Effects of H2 ambient annealing in fully 002-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

Kim, Sung-Yeon; Seo, Jungmok; Jang, Hyeon Woo; Bang, Jungsik; Lee, Woong; Lee, Taeyoon; Myoung, Jae Min

doi:10.1016/j.apsusc.2008.11.085

Cited by 31 publications

(12 citation statements)

References 27 publications

(30 reference statements)

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“…As shown in Fig. 5, the O 1s peaks that were fitted using Gaussian fitting were cantered at $ 530.2 eV, which represents the oxygen bonds from metal oxide, $ 531.3 eV, which is related to the oxygen bonds with oxygen vacancy, and $ 532.4 eV, which is attributed to the chemisorbed oxygen [41][42][43]. The atomic ratios of different oxygen bonds are calculated and inserted in the corresponding figure.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method

Chen

Warwick

Binions

2015

Solar Energy Materials and Solar Cells

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Section: Electrical Propertiesmentioning

confidence: 99%

Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method

Chen

Warwick

Binions

2015

Solar Energy Materials and Solar Cells

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“…Based on this, gallium zinc oxide (GZO: ZnGa 2 O 4 ) is produced with 90% wt of Ga 2 O 3 and 10% wt of ZnO. Moreover, aluminum gallium zinc oxide (AGZO) is a combination of aluminum zinc oxide (AZO) and GZO, respectively indium gallium zinc oxide (IGZO) a combination of IZO and GZO [206,207]. …”

Section: Further Aspects To Technological Advances Of Transparent mentioning

confidence: 99%

Transparent Conducting Oxides—An Up-To-Date Overview

2012

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Transparent conducting oxides (TCOs) are electrical conductive materials with comparably low absorption of electromagnetic waves within the visible region of the spectrum. They are usually prepared with thin film technologies and used in opto-electrical apparatus such as solar cells, displays, opto-electrical interfaces and circuitries. Here, based on a modern database-system, aspects of up-to-date material selections and applications for transparent conducting oxides are sketched, and references for detailed information are given. As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO) and the reasonably priced aluminum-doped zinc oxide (ZnO:Al), are discussed with view on preparation, characterization and special occurrences. For completion, the recently frequently mentioned typical p-type delafossite TCOs are described as well, providing a variety of references, as a detailed discussion is not reasonable within an overview publication.

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“…Under the low working pressures the increasing RF power would improve the reaction between Zn and O and the oxygen vacancy and Zn defects decreased. Figure 2 shows the XRD patterns [7] of different working pressure ZnO films (1, 1.5, 2 Pa) by the same sputter power (200 W) [8] . XRD measurements showed that ZnO thin films deposited under different conditions all gave strong (0 0 2) diffraction peaks.…”

Section: Xrd Studiesmentioning

confidence: 99%

Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

Tang

Wang

et al. 2009

Sci. China Ser. E-Technol. Sci.

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This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.ZnO thin films, RF magnetron sputtering, XRD, ultraviolet transmission spectrum ZnO is a kind of hexagonal wurtzite structure (hexagonal system, unit cell parameters: a=0.3249 nm, c= 0.52056 nm, c/a=1.602). ZnO is a novel material for II-VI wide band gap semiconductor material. It has a large room temperature band gap of 3.37 eV and a high binding energy of 60 meV which is much more higher than any other wide bandgap semiconductor materials (GaN: 25 meV, ZnSe: 22 meV). Its high exciton binding energy (60 meV at room temperature), which is much higher than room temperature heat energy (26 meV), will theoretically favor efficient UV emission processes at room temperature. Consequently, ZnO is a potential candidate for applications in optoelectronic device and receiving more and more important attention. ExperimentalThe ZnO thin films were deposited on amorphous glass substrates by RF magnetron sputtering using Zn (99.999%) target and varying working pressures (1, 1.5, 2, 3 Pa) [1] . The distance between sputter target and substrate was 90 mm. Ar was used as the sputtering gas and O 2 was used as the reactive gas. The thin films were investigated by X-ray diffraction (XRD) [2] and ultraviolet spectrophotometer [3] . XRD studiesThe Glancing Angle (3°) X-ray Diffraction was used to analyze the ZnO thin films [4] . Figure 1 shows the XRD pattern of different sputtering power ZnO films [5] by 1 Pa working pressure. XRD measurements showed that ZnO thin films deposited under different conditions all gave strong (0 0 2) diffraction peaks. Other peaks with much less intensities were observed, indicating that the films are oriented with their c axis perpendicular to the substrate plane.In this experimental, substrate could not be heated so RF power not only made the neutral gas in the vacuum chamber glow discharge, but also raised the temperature of the substrate and the vacuum chamber. As a result, the RF power improved the reaction between the Zn atoms and O atoms. Because of the RF power affected the sputter rate and the temperature of the substrate and vacuum chamber, both of the sputter rate and the temperature affected the thin films, so the power of the RF power affected the quality of the thin films. The less of the FWHM means the films are oriented with

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Effects of H2 ambient annealing in fully 002-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

Cited by 31 publications

References 27 publications

Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method

Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method

Transparent Conducting Oxides—An Up-To-Date Overview

Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

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