Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering

Xiu, Xianwu; Pang, Zhiyong; Lv, Maoshui; Dai, Ying; Ye, Lina; Han, Shuhua

doi:10.1016/j.apsusc.2006.07.024

Cited by 61 publications

(29 citation statements)

References 20 publications

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“…In a recent study [14], Mo-doped zinc oxide thin lms with high transparency and relatively low resistivity was prepared by RF magnetron sputtering at room temperature under di erent Ar pressure. The lms had hexagonal structure and a preferred orientation along the c-axis.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Mekki

Tabet

2014

Acta Phys. Pol. A

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Transparent zinc oxide thin lms doped with molybdenum have been prepared using a DC reactive magnetron sputtering on glass substrates from metallic ZnMo target. The three lms, called A, B, and C, had 1.9 at.% Mo, 2.8 at.% Mo and 4.7 at.% Mo, respectively. The composition of the lms was determined by X-ray photoelectron spectroscopy. The analysis of Mo 3d 5/2 core level spectra indicated that Mo exist in the lms in Mo 6+ oxidation state irrespective of the Mo content in the lm. The X-ray di raction spectrum of lm A showed a texture along the 002 orientation, while that of lm B showed two peaks, one at θ ≈ 34.5 • and the other at ≈ 36.5 • corresponding to 002 and 101 orientations, respectively. Film C showed two small peaks corresponding to 100 and 110 orientations. Optical measurements showed that all three lms had a transmittance of about 80%. The energy band gap showed a linear increase as Mo concentration increases from 3.29 eV to 3.38 eV. The atomic force microscopy image of lm A showed a homogeneous morphology of the surface of the lm, while the atomic force microscopy images of lms B and C showed an inhomogeneous one.

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Section: Introductionmentioning

confidence: 99%

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Mekki

Tabet

2014

Acta Phys. Pol. A

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“…The average percentage transmittance in the range of 450-900 nm is 63%, 76%, 79%, 78% and 79% for the films grown at 30 8C, 150 8C, 300 8C, 450 8C and 600 8C respectively. The average transmittance is calculated by taking the average value of the transmittance over 450-900 nm range for each sample [24].…”

Section: Structural Characterizationmentioning

confidence: 99%

Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

Gupta

Ghosh

Patel

et al. 2009

Applied Surface Science

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“…The resistivity of the ZnO films deposited at 673 K was 1.4 × 10 −4 Ωm and decreased to 6.7 × 10 −5 Ωm with the increasing at.% of Mo. The resistivity was lower for the films deposited at 673 K than for the films deposited at 473 K. This is not only due to the presence of large number of free carriers [38,39] introduced by substitution of sufficient at.% Mo in the Zn site but also due to the improvement in the crystallinity, which minimizes grain boundary scattering, in turn increasing the carrier lifetime [34,40,41].…”

Section: Optical Propertiesmentioning

confidence: 99%

Physical investigations on transparent conducting Mo:ZnO thin films

Srinivasarao

Mohanbabu²,

Mukhopadhyay

2018

Adv Compos Hybrid Mater

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Molybdenum (Mo)-doped zinc oxide (ZnO) thin films were deposited by radio frequency (r.f.) magnetron sputtering on quartz and Si (100) substrates at two different substrate temperatures (473 and 673 K) and at a fixed combined partial pressure 5 Pa of Argon and O 2 . The atomic percentage (at.%) of (Mo) in ZnO was increased from 1 to 2 at.%. The results of X-ray diffraction revealed that the ZnO films deposited at 5 Pa at a substrate temperature of 473 K were highly c-axis oriented with a predominant (002) crystallographic orientation. The intensity of (002) decreased with an increase in the atomic percentage of Mo. Moreover, a growth in the (100), (101), (220), and (103) orientations was observed. The energy-dispersive spectrum (EDS) of the Mo:ZnO films deposited at 5 Pa and 473 K was substoichiometric, whereas the films deposited at 673 K were nearly stoichiometric. The surface morphology of the ZnO films is porous when deposited at 473 K. The optical energy gap of the ZnO films deposited at 473 K increased from 3.11 to 3.64 eV with an increase in the atomic percentage of Mo. The electrical resistivity of the ZnO films decreased from 1.7 × 10 −4 to 6.7 × 10 −5 Ωm with an increase in the substrate temperature and atomic percentage of Mo. The thickness of the films measured by spectroscopic ellipsometry is 440 nm.

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Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering

Cited by 61 publications

References 20 publications

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

Physical investigations on transparent conducting Mo:ZnO thin films

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