Preparation and Memory Performance of a Nanoaggregated Dispersed Red 1‐Functionalized Poly (<i>N</i>‐vinylcarbazole) Film via Solution‐Phase Self‐Assembly

Zhuang, Xiaodong; Chen, Yu; Liu, Gang; Zhang, Bin; Neoh, K. G.; Kang, En‐Tang; Zhu, Chunxiang; Li, Yongxi; Niu, Lijuan

doi:10.1002/adfm.201000258

Cited by 113 publications

(92 citation statements)

References 38 publications

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“…Although this field is still controversial, researchers have proposed several well-established switching mechanisms based on theoretical simulations, experimental results and advanced analytical techniques. [33][34][35][36][37][38][39][40][41] In this review, we summarize the mechanisms that are used most widely in HPP resistive Scheme 3 Chemical structures of triphenylamine-based polyamides.…”

Section: Mechanismmentioning

confidence: 99%

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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This review summarizes the most widely used mechanisms in high-performance polymeric resistive memory devices, such as charge transfer, space charge trapping and filament conduction. In addition, recent studies of functional high-performance polymers for memory device applications are reviewed, compared and differentiated based on the mechanisms and structural design methods used. By carefully designing the polymeric structure based on these systematically investigated switching mechanisms, almost all types of current memory characteristics can be reproduced, and these memory properties show extremely high endurance during long-term operation, which makes polyimides very suitable materials for memory applications. INTRODUCTION High-performance polymersToday, life without polymers is unimaginable. Polymers have become the major synthetic materials of the 21st century. High-performance polymers (HPPs) are particularly desirable. The synthesis and development of HPPs over the past 30 years have drawn the attention of many polymer scientists and investigators. These polymers generally possess excellent physical deformation resistance and chemical deterioration resistance at high temperatures over long periods of time. The quest for HPPs began in the late 1950s to meet the demands of the military, aerospace, machine-building and electronics industries, among many other industrial applications.Hill and Walker 1 first noted that the incorporation of aromatic segments into a polymer generally results in a notable increase in its thermal stability. For this reason, much of the research work has been directed toward aromatic compositions. Hence, HPPs usually tend to contain large numbers of aromatic units in their structures. Several of these aromatic HPPs have been used for commercial applications, such as aromatic polyamides, polyimides, polyesters, polysulfones, polytriphenylamine and heterocyclic polymers (Scheme 1). Aromatic polyamides (aramids) and polyimides, such as DuPont's Kevlar fiber and Kapton film, respectively, have been well known for a long time and constantly attract more interest than other HPPs for their useful properties, such as excellent thermal and oxidative stabilities, high mechanical strengths, low flammabilities and good chemical and radiation resistances. [2][3][4][5][6][7][8][9][10][11][12][13] However, the rigidity of the backbone and strong hydrogen bonding of these HPPs result in high melting or glass-transition

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Section: Mechanismmentioning

confidence: 99%

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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“…[9][10][11] Moreover, organic molecules were the most promising in devicem iniaturization and three-dimensional architecture. [10,[18][19][20][21] For instance, the azobenzene group is widely adopted in molecular skeletons owing to its excellent photoelectric properties. [10,[18][19][20][21] For instance, the azobenzene group is widely adopted in molecular skeletons owing to its excellent photoelectric properties.…”

Section: Introductionmentioning

confidence: 99%

Improving Memory Performances by Adjusting the Symmetry and Polarity of O‐Fluoroazobenzene‐Based Molecules

Liu

Dong

et al. 2015

Chemistry An Asian Journal

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Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.

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“…The electron-withdrawing DR1-functionalized PVK copolymers (PVDR) were fabricated for memory device as the active layer sandwiched between ITO and Al electrode. 13 The PVDR film displayed helical columnar stacks with large grain sizes, whereas a non-aggregated PVDR film exhibited an amorphous morphology with a smaller grain size. Both the PVDR devices showed WORM performance with an ON/OFF current ratio of 10 5 .…”

Section: Introductionmentioning

confidence: 99%

“…7 In our previous work, we designed a series of D-A-type functional polymers. [8][9][10][11][12][13][14][15][16][17][18][19] The device based on conjugated poly[9,9-bis(4-diphenylaminophenyl)-2,7-fluorene] donors covalently bridged with Disperse Red 1 acceptors (DR1-PDPAF-DR1) exhibited an accessible rewritable memory characteristic. 10,17 The excitation of donor promoted CT to the conjugated channel, finally the electrons were at LUMO1 or further at LUMO2 and gave rise to a conductive charge separation state.…”

Section: Introductionmentioning

confidence: 99%

“…Basically, WORM memory, a type of nonvolatile memory capable of permanently holding data and being repeatedly read, is desirable for the ultra low cost and permanent storage of digital images, and eliminates the need for the slow, bulky and expensive mechanical drives used in conventional magnetic and optical memories. [13][14][15][30][31][32][33][34][35][36][37][38] …”

Section: Introductionmentioning

confidence: 99%

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Synthesis and memory performance of a conjugated polymer with an integrated fluorene, carbazole and oxadiazole backbone

Zeng

Liu

Zhang

et al. 2011

Polym J

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A new soluble conjugated polymer, poly[{9-(4-methoxyphenyl)-9H-carbazole}(9,9-dioctylfluorene)(2,5-diphenyl-1,3,4-oxadiazole)] (PCFO), was synthesized through the Suzuki coupling reaction. The absolute fluorescence quantum yield of PCFO was measured using the integrating sphere of a photoluminescence spectrofluorometer, and changed from 49.1% for a dilute tetrahydrofuran solution to 16.2% for a thin film due to the existence of a strong fluorescence quenching effect in the solid state. The HOMO-LUMO bandgap (3.07 eV) calculated from the electrochemical measurement is nearly identical to the optical bandgap (3.06 eV) estimated from the ultraviolet/visible absorption onset data. This film was attached to aluminum and indium-tin oxide contacts to fabricate a memory device with typical bistable electrical switching, nonvolatile write-once read-many-times memory performance, a turn-on voltage of BÀ2.3 V and an ON/OFF ratio of B10 5 . Degradation of the current density was observed for neither the ON nor OFF states after one hundred million continuous read cycles, which indicates that both states were insensitive to read cycles. Keywords: donor-acceptor system; molecular devices; polymer memory; synthesis INTRODUCTIONPolymer memories are proposed to revolutionize electrical applications by providing extremely inexpensive, lightweight and transparent modules that can be fabricated onto plastic, glass or the top layer of CMOS hybrid integration circuits, 1,2 and have been identified as an emerging memory technology by the International Technology Roadmap for Semiconductors since year 2005. 3 Rather than encoding '0'and '1' as a charge stored in the cell of a silicon device, polymer memory stores data in an entirely different form, such as in a highand low-conductivity response to an applied voltage. 4 The molecular structure of polymers can be tailored by functionalizing them with electron donors (D) and acceptors (A) of different strengths, spacer moieties of different steric effects for the electroactive pendant groups, or nanostructured electroactive materials, to induce different memory behaviors in simple metal/polymer/metal devices. 5,6 Very recently, Liu and Chen 7 highlighted the recent developments in D-A polymers for resistive switching memory device applications including conjugated polymers, functional polyimides, nonconjugated pendent polymers and polymer composites. D/A polymer materials (usually carbazole or

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Preparation and Memory Performance of a Nanoaggregated Dispersed Red 1‐Functionalized Poly (N‐vinylcarbazole) Film via Solution‐Phase Self‐Assembly

Cited by 113 publications

References 38 publications

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Improving Memory Performances by Adjusting the Symmetry and Polarity of O‐Fluoroazobenzene‐Based Molecules

Synthesis and memory performance of a conjugated polymer with an integrated fluorene, carbazole and oxadiazole backbone

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