Improving Memory Performances by Adjusting the Symmetry and Polarity of O‐Fluoroazobenzene‐Based Molecules

Abstract

Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.

Changing molecular conjugation with a phenazine acceptor for improvement of small molecule-based organic electronic memory performance

“…1a). Compared with the currently reported azo-based small molecules, [25][26][27] the stability of TPA-ph-TPA was good. This suggested that increasing the degree of conjugation of the molecular framework leads to the further improvement of the molecular heat resistance.…”

Nanostructured Fused Pyrrole Thin Films: Encoding Nano “Bits” with Temporary Remanence

“…In this context, π‐conjugated organic molecules (COMs) represent a niche technology within the plastic electronics community that has gained tremendous attention due to their well‐defined molecular architecture, high purity and reliable batch to batch synthesis . The versatile scalability of organic molecules opens up a suite of inventive fabrication strategies and presents a compelling incentive for device miniaturization as well as large scale fabrication. Their immense prospects were envisaged to have major implications in myriad of applications like organic field‐effect transistors (OFETs), optoelectronic textiles, organic electrochromic devices (OECDs), organic light emitting diodes (OLEDs), organic solar cells (OSCs), organic photodetectors (OPDs), and organic resistive memory devices (ORMs), etc., which are expected to transform the electronics industry.…”

“…Their immense prospects were envisaged to have major implications in myriad of applications like organic field‐effect transistors (OFETs), optoelectronic textiles, organic electrochromic devices (OECDs), organic light emitting diodes (OLEDs), organic solar cells (OSCs), organic photodetectors (OPDs), and organic resistive memory devices (ORMs), etc., which are expected to transform the electronics industry. Displaying attractive properties such as low power consumption, high speed switching, 3D stacking capability, and impressive endurance, COMs are strong contenders to realize low‐cost ORM devices with an impetus to design nanoscale or molecular scale memory for achieving high density data storage (HDDS) …”

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faces constraints in manufacture and geometrical reduction in scaling. [3] The versatile scalability of organic molecules opens up a suite of inventive fabrication strategies [1] and presents a compelling incentive for device miniaturization [4,5] as well as large scale fabrication. [3] The versatile scalability of organic molecules opens up a suite of inventive fabrication strategies [1] and presents a compelling incentive for device miniaturization [4,5] as well as large scale fabrication.

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“…Their immense prospects were envisaged to have major implications in myriad of applications like organic field-effect transistors (OFETs), [6,7] optoelectronic textiles, [8,9] organic electrochromic devices (OECDs), [10,11] organic light emitting diodes (OLEDs), [12,13] organic solar cells (OSCs), [14,15] organic photodetectors (OPDs), [16,17] and organic resistive memory devices (ORMs), [18,19] etc., which are expected to transform the electronics industry. [5,22] A comprehensive understanding of resistive switching phenomenon and its dependence on molecular structure is imperative for enhancing the consistency and reliability of organic resistive memory (ORM) devices. [5,22] A comprehensive understanding of resistive switching phenomenon and its dependence on molecular structure is imperative for enhancing the consistency and reliability of organic resistive memory (ORM) devices.…”