Preparation and characterization of some AIBIICV type semiconductors

Bacewicz, R.; Ciszek, T.F.

doi:10.1063/1.99188

Cited by 115 publications

(72 citation statements)

References 5 publications

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“…Also notice that the total number of electrons in (ZnAs) − is equal to that of GaAs. LiZnAs has a direct band gap of ∼ 1.6 eV [12][13][14][15], which is comparable to that of GaAs (1.42 eV). On the other hand, the isovalent substitution of Mn 2+ for Zn…”

mentioning

confidence: 59%

“…Recent µSR measurements of Li(Zn 1−x Mn x )As [9] have established that the magnetically ordered volume reaches 100 % below T c , and the magnitudes of the ferromagnetic exchange coupling and the ordered moment are comparable to those of (Ga,Mn)As [16]. More recently, some of us [17] found that the iso-structural direct-gap semiconductor LiZnP [12,18] also undergoes a ferromagnetic transition upon Mn doping, and its bulk magnetic properties are very similar to those of LiZnAs. * Electronic address: ningfl@zju.edu.cn…”

Section: +mentioning

confidence: 99%

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(La1−xBax)(Zn1−x
Ding
¹
,
Man
²
,
Qin
³

et al. 2013
Phys. Rev. B
82
6
85
0
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We employ NMR techniques to investigate the nature of Mn spins in the I-II-V diluted magnetic semiconductor Li(Zn1−xMnx)P (x = 0.1, Curie temperature Tc = 25 K). We successfully identify the 7 Li NMR signals arising from the Li sites adjacent to Mn 2+ , and probe the static and dynamic properties of Mn spins. From the NMR spin-lattice relaxation data, we show that the Mn spin-spin interactions extend over many unit cells.

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mentioning

confidence: 59%

Section: +mentioning

confidence: 99%

(La1−xBax)(Zn1−x
Ding
¹
,
Man
²
,
Qin
³

et al. 2013
Phys. Rev. B
82
6
85
0
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“…12,13 The crystal structures and band structures of LiZnAs are very similar to those of GaAs, 13 was successfully synthesized by Deng et al 11 with a ferromagnetic transition temperature up to 50 K. In this system, the individual control of the magnetic atoms via (Zn 2+ , Mn 2+ ) substitutions and carriers via off-stoichiometry of Li concentrations are successful achieved. Hence, Li(Mn,Zn)As is not similar to (Ga,Mn)As but rather to (Zn,Mn)Te, as Mn does not introduce holes and, in order to induce ferromagnetism, acceptor co-doping is necessary, by e.g., Zn-substitutional Li, as in the case of (Zn,Mn)Te.…”

Section: Introductionmentioning

confidence: 94%

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Chen

Deng

et al. 2016

AIP Advances

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We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMny)As with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,Mn)As. No ferromagnetic order occurs with single (Zn,Co) or (Zn, Mn) substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,Mn)As. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

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“…1a) 6,7 and a band gap (1.61 eV) similar to that of GaAs (1.52 eV) 8 . Monovalent Li and divalent Zn together substitute the role of trivalent Ga (ref.…”

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confidence: 92%

Li(Zn,Mn)As as a new generation ferromagnet based on a I–II–V semiconductor

et al. 2011

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In a prototypical ferromagnet (Ga,mn)As based on a III-V semiconductor, substitution of divalent mn atoms into trivalent Ga sites leads to severely limited chemical solubility and metastable specimens available only as thin films. The doping of hole carriers via (Ga,mn) substitution also prohibits electron doping. To overcome these difficulties, masek et al. theoretically proposed systems based on a I-II-V semiconductor LiZnAs, where isovalent (Zn,mn) substitution is decoupled from carrier doping with excess/deficient Li concentrations. Here we show successful synthesis of Li 1 + y (Zn 1 − x mn x )As in bulk materials. Ferromagnetism with a critical temperature of up to 50 K is observed in nominally Li-excess (y = 0.05-0.2) compounds with mn concentrations of x = 0.02-0.15, which have p-type metallic carriers. This is presumably due to excess Li in substitutional Zn sites. semiconducting LiZnAs, ferromagnetic Li(Zn,mn)As, antiferromagnetic LimnAs, and superconducting LiFeAs systems share square lattice As layers, which may enable development of novel junction devices in the future.

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Preparation and characterization of some AIBIICV type semiconductors

Cited by 115 publications

References 5 publications

(La1−xBax)(Zn1−x
Ding
¹
,
Man
²
,
Qin
³

et al. 2013
Phys. Rev. B
82
6
85
0
View full text Add to dashboard Cite

(La1−xBax)(Zn1−x
Ding
¹
,
Man
²
,
Qin
³

et al. 2013
Phys. Rev. B
82
6
85
0
View full text Add to dashboard Cite

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Li(Zn,Mn)As as a new generation ferromagnet based on a I–II–V semiconductor

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Preparation and characterization of some AIBIICV type semiconductors

Cited by 115 publications

References 5 publications

(La1−xBax)(Zn1−xDing1, Man2, Qin3 et al. 2013Phys. Rev. B826850View full textAdd to dashboardCite

(La1−xBax)(Zn1−xDing1, Man2, Qin3 et al. 2013Phys. Rev. B826850View full textAdd to dashboardCite

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Li(Zn,Mn)As as a new generation ferromagnet based on a I–II–V semiconductor

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(La1−xBax)(Zn1−x
Ding
¹
,
Man
²
,
Qin
³

et al. 2013
Phys. Rev. B
82
6
85
0
View full text Add to dashboard Cite

(La1−xBax)(Zn1−x
Ding
¹
,
Man
²
,
Qin
³

et al. 2013
Phys. Rev. B
82
6
85
0
View full text Add to dashboard Cite