Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Meiying; Zhao, Junbin; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing; Chen, Jin

doi:10.1063/1.4967778

Cited by 16 publications

(11 citation statements)

References 39 publications

(39 reference statements)

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“…We measured magnetotransport down to 5 K and observed large intrinsic negative magnetoresistance (nMR) of up to ~40%, almost 10 times greater than the magnetoresistance in typical metallic magnetic materials [26][27][28][29] (< 5%) and more than twice that of the magnetoresistance values in many dilute magnetic semiconductors (~15%). [30,31] Magnetic measurements on single crystals confirm the previously reported magnetic structure: the emergence of an A-type antiferromagnetic (AF) phase below TN = 132 ± 1 K consisting of ferromagnetic (FM) layers, with an in-plane magnetic easy axis along the crystallographic baxis, coupled antiferromagnetically along the c-axis (Figure 1A,B). [25] The magnetic structure of CrSBr, coupled with its easily cleavable layered vdW structure, high magnetic ordering temperature, and strong coupling between magnetism and transport make this compound attractive to advance the fields of magnetic semiconductors, 2D magnetism, and nanospintronics.…”

Section: Main Textsupporting

confidence: 85%

“…Such giant intrinsic fixed-field MRR is nearly 10 times larger than typical magnetic metals [26][27][28][29] and double that of many dilute magnetic semiconductors. [30,31] Above TN, the fixed-field MRR is non-zero and negative, manifesting a local minimum between 150 and 170 K. This temperature range is consistent with the Weiss constants extracted from the magnetic susceptibility data (θCW = 185, 164 and 184 K for the a-, b-, and c-axes, respectively) (Table S2) and signals the emergence of a hidden magnetic phase above TN characterized by ferromagnetically ordered layers, with no long range magnetic order between the layers. [42] In summary, we demonstrate CrSBr to be a robust antiferromagnetic semiconductor with exceptionally strong coupling between magnetic and electronic properties manifested through the observation of nMR up to ~40%.…”

Section: Main Textmentioning

confidence: 99%

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Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

et al. 2020

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The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air‐stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, TN = 132 ± 1 K, CrSBr adopts an A‐type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is ΔE = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin‐based electronics.

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Section: Main Textsupporting

confidence: 85%

Section: Main Textmentioning

confidence: 99%

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

et al. 2020

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“…the "111" type Li(Zn,Mn)As、 "122" type (Ba,K)(Zn,Mn) 2 As 2 and "1111" type (La,Ca)(Zn,Mn)SbO, which are named by the chemical ratio of their parent phases. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Among these new DMSs, the ThCr 2 Si 2 type (Ba,K)(Zn,Mn) 2 As 2 has a Curie temperature (Tc) up to 230 K which marks the current reliable record Tc for DMSs where ferromagnetism is mediated by carriers. [12][13] The (Ba,K)(Zn,Mn) 2 As 2 is believed to be one of milestone materials for the research of DMSs.…”

Section: Introductionmentioning

confidence: 99%

Single Crystal Growth and Spin Polarization Measurements of Diluted Magnetic Semiconductor (BaK)(ZnMn)2As2

Zhao

Lin

Deng

et al. 2017

Sci Rep

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Recently a new diluted magnetic semiconductor, (Ba,K)(Zn,Mn)2As2 (BZA), with high Curie temperature was discovered, showing an independent spin and charge-doping mechanism. This makes BZA a promising material for spintronics devices. We report the successful growth of a BZA single crystal for the first time in this study. An Andreev reflection junction, which can be used to evaluate spin polarization, was fabricated based on the BZA single crystal. A 66% spin polarization of the BZA single crystal was obtained by Andreev reflection spectroscopy analysis.

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“…We present our data on PF and doping levels in light of experimental evidence on few LiZnX systems. Recently, polycrystalline samples of LiZn 1−x As were successfully synthesized with less than 15 % doping by solid-state re-action [51]. The DTA measurements have shown that the melting temperature of LiZnP [13] and LiZnAs [14] are 850 and 950 0 C, respectively.…”

Section: Transport Propertiesmentioning

confidence: 99%

Polytypism at its best: improved thermoelectric performance in Li based Nowotony-Juza phases

Chopra¹,

Zeeshan²,

Pandey³

et al. 2018

Preprint

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In principle thermoelectricity is a viable route of converting waste heat into electricity, but the commercialization of the technology is limited by its present efficiency. In quest of improved materials, utilizing an ab initio approach, we report polytypism induced improved thermoelectric performance in Li based Nowotny-Juza phases LiZnX (X = N, P, As, Sb, and Bi). In addition to LiZnSb, we find that cubic LiZnBi is energetically more favorable than the hitherto explored hexagonal phase whereas the hexagonal polytypes of cubic LiZnP, and LiZnAs are likely to be stabilized by pressure -hydrostatic pressure can be aided by internal pressure to facilitate the phase transition. We find a pronounced impact of the polytypism on thermoelectric properties. We determine conservative estimates of the figure of merit and find that while power factor and figure of merit values are improved in hexagonal phases, the values in cubic phases are still excellent. The ZT values of cubic and hexagonal LiZnSb at 700 K are 1.27 and 1.95, respectively. Other promising ZT values at 700 K are 1.96 and 1.49 of hexagonal LiZnP and LiZnAs, respectively, for n-type doping. Overall, our findings proffers that the Nowotny-Juza phases are a new potential class of thermoelectric materials.Usage: Secondary publications and information retrieval purposes.

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Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Cited by 16 publications

References 39 publications

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Single Crystal Growth and Spin Polarization Measurements of Diluted Magnetic Semiconductor (BaK)(ZnMn)2As2

Polytypism at its best: improved thermoelectric performance in Li based Nowotony-Juza phases

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