Preparation and characterization of SnO2 thin films deposited by spray pyrolysis from SnCl2 and SnCl4 precursors

Gordillo, G.; Moreno, Luis; Cruz, W. de la; Teheran, P.

doi:10.1016/0040-6090(94)90826-5

Cited by 165 publications

(86 citation statements)

References 3 publications

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“…The decrease in resistivity may be due to the conversion of SnO to SnO 2 so that the SnO concentration is decreased, leading to an increased conductivity due to the filling of the oxygen vacancies in SnO 2 and hence the oxygen-deficient SnO 2 would become nearly stoichiometric and insulating. The minimum resistivity of the SnO 2 films obtained in this work is about 1.7 9 10 -3 X cm, and this agrees with the result in similar work (Gordillo et al 1994;Raviendra and Sharma 1985).…”

Section: Electrical Propertiessupporting

confidence: 81%

“…2d, which recognizes the peaks at 2h = 33.9813°in the spectra of SnO 2 film corresponding to the reflection from (101) plane. The presence of sharp peak (in all deprogram) indicates that all films are polycrystalline in nature with a tetragonal structure and in accordance with data reported in literature (Gordillo et al 1994;Choe et al 1999;Mitchell 2004). Table 1 shows the effect of oxidation times on the XRD characteristics evaluated from the diffrograms.…”

Section: Xrd-diffractionsupporting

confidence: 75%

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Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

et al. 2013

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Transparent and conducting SnO 2 thin film has been produced on (quartz, ITO, silicon and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600°C oxidation temperature and different oxidation time. The structural, optical, electrical properties, scan electron microscope and atomic force microscope of the prepared films were studied. The transmittance T in the visible and NIR was investigated; the allowed direct energy gap was determined to be 3.18 eV at optimum condition of 600°C and 90 s. The dependence of the resistivity on the film thickness and oxidation time has been studied. The optimum thickness of high transmittance and lowest resistivity is about 150 nm for SnO 2 , where q = 1.7 9 10 -3 X cm and T = 88 %. The sensitivity behaviors of the n-SnO 2 /p-PSi/c-Si-based gas sensor to H 2 and CO 2 gas were investigated. The film sensitivity dependence on the temperature and test gas concentration was tested and the optimum operation temperature was determined at around 250 and 300°C with an applied voltage was constant at 2.5 V.

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Section: Electrical Propertiessupporting

confidence: 81%

Section: Xrd-diffractionsupporting

confidence: 75%

Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

et al. 2013

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“…In the present work, precursor solutions were mixtures of doubly hydrated stannous chloride (SnCl 2 ·2H 2 O) and thiourea (CS(NH 2 ) 2 ). The usage of SnCl 2 instead of SnCl 4 reduces material cost as well as deposition temperature required for the deposition substantially, which is very vital for device level applications [25].…”

Section: Methodsmentioning

confidence: 99%

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

et al. 2010

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SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N 10 5 /cm) were deposited at substrate temperature of 375°C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375°C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS 2 , Sn 2 S 3 were also determined.

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“…This result shows that chemical processes occurred during the pyrolytic reaction, leading to the formation of the SnO 2 compound. It has been suggested by Gordillo et al (1994) that in the SnCl 2 precursor, Sn and Cl atoms are bound by ionic bonds, whereas in the SnCl 4 precursor, the Sn and Cl atoms are bonded with covalent bonds. In the case of the SnCl 2 .2H 2 O precursor, the FTO films fabricated by using the ethanol solvent have a resistivity value as low as 3.32×10 -5 Ω.cm, in comparison to that of methanol, which has a value of 2.62×10 -4 Ω.cm.…”

Section: The Effect Of Various Precursors and Solvents On The Charactmentioning

confidence: 99%

The Effect of Various Precursors and Solvents on the Characteristics of Fluorine-doped Tin Oxide Conducting Glass Fabricated by Ultrasonic Spray Pyrolysis

Yuwono¹,

Arini²,

Lalasari³

et al. 2017

IJTech

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Transparent conductive oxide (TCO) glass is one of most important components in dyesensitized solar cell (DSSC) device. In addition to its high electrical conductivity, transparency is another important requirement that must be achieved in fabricating TCO. One TCO film is fluorine-doped tin oxide (FTO), which can be considered as the most promising substitution for indium-doped tin oxide (ITO), since the latter is very expensive. However, the fabrication techniques for TCO film need to be carefully selected; the synthesis parameters must be properly optimized to provide the desired properties. In this work, FTO glass has been fabricated by the ultrasonic spray pyrolisis technique with different precursors, i.e. tin (II) chloride dihydrate (SnCl 2 .2H 2 O) and anhydrous tin (IV) chloride (SnCl 4 ), as well as different solvents, i.e. ethanol and methanol. For both conditions, ammonium fluoride (NH 4 F) was used as the doping compound. The resulting thin films were characterized by use of a scanning electron microscope (SEM), x-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectroscopy and a four-point probe test. The results of the investigation show that the highest transmittance of 88.3% and the lowest electrical resistivity of 8.44×10 -5 Ω.cm were obtained with the FTO glass processed with 20 minutes of spray pyrolysis deposition and 300 o C substrate heating, using SnCl 4 as the precursor and methanol as the solvent. It can be concluded that TCO fabrication with tin chloride precursors and ammonium fluoride doping using ultrasonic spray pyrolisis can be considered as a simple and low cost method, as well as a breakthrough in manufacturing conductive and transparent glass.

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Preparation and characterization of SnO2 thin films deposited by spray pyrolysis from SnCl2 and SnCl4 precursors

Cited by 165 publications

References 3 publications

Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

The Effect of Various Precursors and Solvents on the Characteristics of Fluorine-doped Tin Oxide Conducting Glass Fabricated by Ultrasonic Spray Pyrolysis

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