“…Dating back to 1980's, thermal evaporation of several gate oxides, such as Yb 2 O 3 , Er 2 O 3 , Pr 2 O 3 on II-VI materials as transistor channels was realized [48,54]. Since then, MBE, PLD and other techniques have been developed for silicon and III-V semiconductor based microelectronics [37,38,40,50]. The growth temperature range extends from the room temperature (RT) up to 900 • C (Table 1).…”