Preparation and characterization of electron beam evaporated WO3 thin films

Influence of hydrogen annealing on the optoelectronic properties of WO3 thin films

“…The values of the indirect band gaps were 3.09, 2.93, 2.96, and 3.01 eV for the as-deposited films, and the films annealed at 350, 450, and 550 C, respectively. Our values of the band gap and its decrease with annealing are consistent with previous studies on evaporated tungsten oxide thin films [2,56]. Initially, the band gap of the films annealed at 350 and 450 C was decreased, which may be attributed to the oxygen vacancies induced by hydrogen annealing.…”

“…It is a promising n-type semiconductor with an indirect band in the range 2.7e3.4 eV [1,2]. WO 3 has emerged as a potential candidate for photoelectrochemical and photocatalytic applications owing to its low cost and environment friendliness [3e5].…”

“…Moreover, it has also emerged as a chromogenic material for electrochromic [12], gasochromic [13], and photochromic [14] applications. In order to fabricate thin films and nanostructures of WO 3 , several preparation methods such as thermal evaporation [15], electron-beam evaporation [2], sputtering [16], pulsed laser deposition [17], solegel [6,18] and several other techniques [19e24] have been used. Furthermore, several strategies such as incorporation of various elements as dopants into pure tungsten oxide and post thermal annealing have been shown to improve the properties of tungsten oxide for various potential applications.…”

OPTICAL MULTISENSOR BASED ON W AND Ni OXIDE FILMS FOR THE DETERMINATION OF CO AND H2 CONCENTRATION

“…Покрытые тонким каталитически актив-ным слоем платины или палладия, электро-осажденные пленки WO 3 при действии мо-лекулярного водорода приобретают синюю окраску, интенсивность которой определяется концентрацией водорода в газовой смеси [10][11][12][13]; в отсутствие водорода пленка обесцвечи-вается [14,15]. В водородно-воздушной среде на катализаторе устанавливается равновесный потенциал, который отвечает равенству на ее поверхности тока окисления водорода, по ре-акции Н 2 = 2Н + + 2е -и тока восстановления кислорода, по реакции [16].…”

Mechanically exfoliated ultra-thin WO3 nanostructures: study of their enhanced electrical properties

“…Initial step is the preparation of the layered bulk material, and the final stage is the exfoliation procedure [14]. At present, there is a wide range of controlled methods available to yield various morphologies of WO 3 nanostructures, for example, microwave-assisted hydrothermal [15], vapourphase deposition [16], sol-gel [17], electron beam [18] and arc discharge [19]. However, the amalgamation of Q2D WO 3 as a potential candidate is yet to be examined in depth.…”