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Thin films of gallium oxide were deposited by electron-beam evaporation on unheated substrates. Samples were deposited either without oxygen, or under an oxygen partial pressure of 5×10−4 mbar. The films were amorphous. Films deposited with oxygen were stoichiometric, whereas those deposited without oxygen were substoichiometric. The optical properties of the films were derived from measurements, at normal incidence, of transmittance and reflectance. Films deposited without oxygen had higher values of the refractive index and extinction coefficient. The energy gaps were 5.04 and 4.84 eV for films deposited with and without oxygen, respectively.

Thin films were produced by the reactive thermal evaporation of pure silver oxide (AgO) in a background of molecular oxygen. The effects of the deposition rate and oxygen partial pressure on the structural, chemical, electrical and optical properties of the films were investigated. The films were characterized using x-ray diffraction, x-ray photoelectron spectroscopy, electrical resistivity and normal-incidence transmittance and reflectance. The resulting films were found to be mainly metallic with a small oxide component that increased with the oxygen partial pressure.