Preparation and characterization of Cu₂ZnSnSe₄thin films grown from ZnSe and Cu₂SnS₃precursors in a two stage process

Enhancement of photo‐conversion efficiency in Cu2ZnSn(S,Se)4 thin‐film solar cells by control of ZnS precursor‐layer thickness

“…Thus, the work function mapping analysis indicates that the ZnSe‐related phases appear near the grain boundaries of the CZTSSe layer, and these observations correspond to the findings reported in previous studies, as shown in Figure (b). Large ZnSe phases accumulate on the front of the absorber layer, resulting in a detrimental effect on the performance of the device, especially for J SC and the FF . The ZnSe phase accumulated on the surface when the ZnS conditions were not the optimum, and the presence of the ZnSe phase accumulated on the back spot of the absorber layer for the optimized ZnS condition, as shown in Figure (b).…”

“…Ar gas was then introduced into the sealed furnace, and the pressure increased to atmospheric pressure. The final thickness of the absorbers was 1.2 µm, and the detailed formation of the phases involves Cu 2 SnSe 3 and ZnS combining into Cu 2 ZnSn(S,Se) 4 . The CZTSSe absorber layers were covered with a 50‐nm‐thick CdS buffer layer through a chemical bath deposition.…”

Influence of composition and annealing on the characteristics of Cu 2 SnS 3 thin films grown by cosputtering at room temperature

“…On the contrary, the transmittance reached 60 % after annealing. This seems to be due to the improvement of crystalline quality of the Cu 2 SnS 3 phase [20]. The transmittance decreases smoothly by decreasing of the wavelength.…”