2015
DOI: 10.1016/j.tsf.2014.09.023
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Influence of composition and annealing on the characteristics of Cu 2 SnS 3 thin films grown by cosputtering at room temperature

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Cited by 47 publications
(18 citation statements)
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“…CTS has been synthesized using both physical and chemical methods. Physical methods include co-sputtering [10], co-evaporation [11], PLD (pulsed laser deposition) [12], sulfurization [13], ball mill [14] while chemical methods include electrodeposition [15], SILAR (successive ionic layer adsorption and reaction) [16], spin coating [17], spray pyrolysis [18], microwave irradiation [19], sonochemical [20], layer by layer solution method [21] and sol gel method [22]. Avellaneda et.…”
Section: Introductionmentioning
confidence: 99%
“…CTS has been synthesized using both physical and chemical methods. Physical methods include co-sputtering [10], co-evaporation [11], PLD (pulsed laser deposition) [12], sulfurization [13], ball mill [14] while chemical methods include electrodeposition [15], SILAR (successive ionic layer adsorption and reaction) [16], spin coating [17], spray pyrolysis [18], microwave irradiation [19], sonochemical [20], layer by layer solution method [21] and sol gel method [22]. Avellaneda et.…”
Section: Introductionmentioning
confidence: 99%
“…The absorber thickness plays a major role in the performance of solar cell devices, whereas the absorber thickness and grain growth largely depend on crystal growth conditions, i.e., precursor preparation (Cu‐Sn) and post‐annealing/sulfurization conditions. [ 44 ] Improvement in all the device parameters was observed after increasing the CTS absorber layer thickness, i.e., open‐circuit voltage ( V oc ), short‐circuit current density ( J sc ), fill factor (FF), and PCE. More specifically, CTS TFSCs based on CTS‐2 absorber exhibited the highest V oc , J sc , FF, and PCE values of 0.155 V, 24.7 mA cm −2 , 34.2%, and 1.31%, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…[ 7–9 ] The different geometrical arrangements of the cations in the atomic structures cause variation in the measured band‐gap energies, varying between 0.92 for monoclinic to 1.28 eV for cubic structures. [ 7,10–12 ]…”
Section: Introductionmentioning
confidence: 99%