Preparation and characterization of chemically deposited lead sulphide thin films

Basu, Palash Kumar; Chaudhuri, Tapas Kumar; Nandi, K.C.; Saraswat, R. S.; Acharya, H. N.

doi:10.1007/bf00582474

Cited by 17 publications

(12 citation statements)

References 18 publications

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“…Similar large grains have also been seen in ALE-and CBD-grown films. 3,7 SILAR films had smaller grain size but the films were thinner. 9 The grain size reported earlier for cathodically electrodeposited PbS films was 13 nm, but the thickness of the films was not mentioned.…”

Section: Cyclic Electrodeposition Of Pbs Thin Filmsmentioning

confidence: 99%

“…It is predicted that in the vicinity of the most negative potential, E 1 , PbEDTA 2Ϫ complex is reduced according to reaction 3 PbEDTA 2Ϫ (aq) ϩ H 2 O ϩ 2e Ϫ } Pb 0 (s) ϩ HEDTA 3Ϫ (aq) ϩ OH Ϫ (aq) [3] During the reversed scan Pb 0 oxidizes and reacts with sulfide to form PbS 4 Pb 0 (s) ϩ HS Ϫ (aq…”

Section: Cyclic Electrodeposition Of Pbs Thin Filmsmentioning

confidence: 99%

“…Similar results have also been achieved in CVD, ALE, and most CBD experiments. 3,[5][6][7][8] SILAR-grown films were strongly oriented in the (200) direction, and some CBD processes had led to epitaxial growth on Ge(100) and InP(100) substrates. 2,9 Also, HWE-grown films were epitaxial on the Si(100) surface.…”

Section: Cyclic Electrodeposition Of Pbs Thin Filmsmentioning

confidence: 99%

“…Lead sulfide (PbS) is a narrow-bandgap (0.4 eV) photoconductor which has been used in low-cost, thin-film infrared detectors. 1 PbS thin films have been prepared by chemical bath deposition (CBD), [1][2][3][4][5] chemical vapor deposition (CVD), 6 atomic layer epitaxy (ALE), 7,8 successive ionic layer adsorption and reaction (SILAR), 9 and electrodeposition methods. [10][11][12] In addition, epitaxial PbS films have been deposited by hot wall epitaxy (HWE).…”

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confidence: 99%

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Cyclic Electrodeposition of PbS Thin Films

Saloniemi¹,

Ritala²,

Leskelä³

et al. 1999

J. Electrochem. Soc.

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Section: Cyclic Electrodeposition Of Pbs Thin Filmsmentioning

confidence: 99%

Section: Cyclic Electrodeposition Of Pbs Thin Filmsmentioning

confidence: 99%

Section: Cyclic Electrodeposition Of Pbs Thin Filmsmentioning

confidence: 99%

mentioning

confidence: 99%

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Cyclic Electrodeposition of PbS Thin Films

Saloniemi¹,

Ritala²,

Leskelä³

et al. 1999

J. Electrochem. Soc.

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“…The deposition and processing of lead chalcogenide thin films play a huge role in the resulting material properties, while oxygen annealing and sensitization is important for achieving the desirable midinfrared photodetecting properties [3]. PbS and PbSe detectors are produced commercially in film form using a chemical deposition technique [4,5,6,7], so there are currently no commercially available detectors produced using evaporation methods, required for easy patterning and integration on chip. However, unlike PbS and PbSe, PbTe thin film photoconductors can be deposited onto any substrate by thermal evaporation [8,9,10] through a low temperature process that allows patterning via either a shadow mask or a lithography liftoff process.…”

Section: Introductionmentioning

confidence: 99%

1/f Noise Characteristics of Waveguide-Integrated PbTe MIR Detectors and Impact on Limit of Detection

Guglielmi

Zanetto

et al. 2021

J. Lightwave Technol.

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The noise power spectral density of a detector is essential for determining the frequency of operation and readout architecture that yields an optimal signal-to-noise ratio. In this work, we characterize a waveguide-integrated PbTe mid-infrared detector and report on its noise spectrum, highlighting the presence of a current-dependent 1/f term dominating at low frequency and/or high bias over the Johnson component typical of a photoconductor. This behaviour, together with the substantially flat frequency response in the range between 1 kHz to 1 MHz, guide towards a lock-in readout strategy, that allows one to operate in the region of minimum noise without penalties in the detection performance. Practical guidelines to optimize the readout resolution are provided and the limit of detection of a gas sensing system exploiting PbTe photoconductors is derived, as an example of how a careful co-design of sensors and electronics can dramatically improve the detection performance.

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