Preferred crystal orientation of hafnium films prepared by ion beam assisted deposition

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

“…In the first possible scenario under these conditions, thin film growth initially occurs through the aggregation of neutral species, being assisted by ions stemming from an independent source. For the sake of convenience, we shall refer to this as ion-assisted OAD (IA-OAD) [199][200][201][202][203][204]. In the second case, a thin film is formed by the impingement of a highly or completely ionized flux of deposition species arriving at the substrate along an oblique direction.…”

“…A straightforward application of the IA-OAD method concerns the control of the crystalline texture of the deposited films [199,204]; i.e., the variation of the crystallographic planes of the crystallites with respect to the substrate by changing the impingement angle of the ions. Moreover, as neutral species are produced in IA-OAD by e-beam evaporation, this has been proposed as a method capable of also controlling the film morphology (i.e., the tilt angle of the nanocolumns, areal density, etc.…”

Growth of single crystal silver thin film induced by incident ion beam bombardment

“…[10][11][12][13] For example, recent works have reported that texture films can be obtained with the ion bombardment at some specific impinging angles. [3][4][5][6][7][8][9] Biaxial in plane alignment of YSZ thin films were first reported by Iijima et al 4 by bombardment at an angle of 55u from the substrate normal. This angle corresponds to the direction of a [111] axis in the YSZ unit cell with [100] fixed normal.…”

“…However, the impinging angle attracted little attention in the previous reports. The closest reports [3][4][5][6][7][8][9] suggested that the incident angles of ion beam largely influence the formation of oriented crystalline. In these reports, IBAD has been used to deposit biaxially [3][4][5][6]9 and uniaxial 7,8 preferential thin films on polycrystalline and amorphous substrates.…”

“…The closest reports [3][4][5][6][7][8][9] suggested that the incident angles of ion beam largely influence the formation of oriented crystalline. In these reports, IBAD has been used to deposit biaxially [3][4][5][6]9 and uniaxial 7,8 preferential thin films on polycrystalline and amorphous substrates. Although the theory of texture formation is still in argument, [10][11][12][13] it shows the possibility to grow single crystal epitaxial thin films by controlling the incident angle of ion beam.…”