Preferential Etching of GaAs Through Photoresist Masks

Otsubo, M.; Oda, Tetsuya; Kumabe, H.; Miki, Hidejiro

doi:10.1149/1.2132908

Cited by 58 publications

(24 citation statements)

References 12 publications

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“…An etching solution of citric acid, hydrogen peroxide, and water was used. 4 After contacting and mesa etching, the samples were cooled close to liquid nitrogen temperature and then heated up to well above room temperature at a slow rate of 1°C/min by scanning the set point of a temperature controller. The conductance at zero bias was measured by a four-wire method and lock-in technique.…”

Section: Methodsmentioning

confidence: 99%

Band offsets at the GaInP/GaAs heterojunction

Lindell

Pessa

Salokatve

et al. 1997

Journal of Applied Physics

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Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films J. Appl. Phys. 82, 1214 (1997) We have measured current-voltage curves and the temperature dependence of the zero bias conductance for a p-type Be-doped GaInP/GaAs heterojunction grown by the molecular beam epitaxy method. We have determined the valence band offset ⌬E from both measurements and find it to be 310 meV within 5% of accuracy. Similarly, we find for an n-type Si-doped sample that the conduction band offset ⌬E C is 95 meV. First-principles calculations have been carried out for the atomic and electronic structures of the interfaces. For the thermodynamically favored interfaces, the valence band offset is found not to be sensitive to atomic relaxations at the interface. The calculated values are in good agreement with the experiments.

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Section: Methodsmentioning

confidence: 99%

Band offsets at the GaInP/GaAs heterojunction

Lindell

Pessa

Salokatve

et al. 1997

Journal of Applied Physics

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“…Sublattice reversal was also con®rmed by orientationdependent preferential etching [14]. Pro®les of (100) GaAs etched in an H 2 SO 4 :H 2 O 2 :H 2 O (8:1:1) solution through photoresist mask stripes are dependent on the stripe direction as shown in Fig.…”

Section: Gaas/si/gaas Sublattice Reversal Epitaxymentioning

confidence: 84%

Sublattice reversal epitaxy: a novel technique for fabricating domain-inverted compound semiconductor structures

Kondo

Koh

Ito

2000

Science and Technology of Advanced Materials

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Sublattice reversal in III±V compound semiconductors grown on group-IV epitaxial layers on III±V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound semiconductor structures. Sublattice reversal epitaxy has been demonstrated in GaAs/Si/GaAs, GaP/Si/GaP, and GaAs/Ge/GaAs systems. Growth of sublattice-reversed epilayers is assisted by selfannihilation of antiphase domains. Periodically domain-inverted AlGaAs waveguides of satisfactory crystal quality have been successfully fabricated using sublattice reversal epitaxy of GaAs/Ge/GaAs (100) system combined with photolithography and regrowth techniques. q

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“…Although the Caro's solution is widely used as preferential etch, in the highly diluted present composition it is nearly isotropic [20]. (3) Citric acid etch (C 6 H 8 O 7 :H 2 O 2 :H 2 O, 5:1:100, etching time 2 min at 23 • C, {100} etch rate 20 nm/min) is known as anisotropic and to be particularly gentle with respect to a photoresist mask [21]. Unlike the concentrated etch (5:1:Y with Y<1) the highly diluted etch (Y=100) is nonselective on GaAs compared with AlGaAs [22].…”

Section: Methodsmentioning

confidence: 99%