We present a nanolithography technique based on an atomic force microscope. A thin resist layer on the sample surface is plastically indented by a vibrating tip. Controlling of the vibration amplitude and tip movement enables one to plow a narrow furrow along line segments of arbitrary length and direction. Different line segments which form a complex pattern can be plowed at a scan speed up to 5 μm/s. The geometric distortion of the resist pattern is less than 50 nm, where at scan speed in excess of 1 μm/s an interrupt of at least 10 ms is necessary between the line segments. The minimum offset error in positioning a pattern with respect to existing features is less than 4% of the scanning field. The patterns are transferred into SiO2, Si, GaAs, Ti, and Au by wet-chemical etching. Minimum linewidth is 25 nm in 1.5 nm oxide layers, 75 nm in 10 nm Ti film and 40 nm in 10 nm Au. On semiconductor surfaces smooth and perfectly shaped V grooves of 55 nm width are obtained.

A novel scalable and stackable nonvolatile memory technology suitable for building fast and dense memory devices is discussed. The memory cell is built by layering a storage element and a selector. The storage element is a Phase Change Memory (PCM) cell [1] and the selector is an Ovonic Threshold Switch (OTS) [2]. The vertically integrated memory cell of one PCM and one OTS (PCMS) is embedded in a true cross point array. Arrays are stacked on top of CMOS circuits for decoding, sensing and logic functions. A RESET speed of 9 nsec and endurance of 10 6 cycles are achieved.One volt of dynamic range delineating SET vs. RESET is also demonstrated.

A new nanolithography technique based on mechanical surface deformation with the tip of a scanning force microscope is reported here. In the lithographic step, the furrow is dynamically plowed into the substrate (see Figure). The pattern transfer is then carried out in a separate wet chemical etching step, thus preserving the tip. The technique can provide linewidths as narrow as 20 nm.

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