2005
DOI: 10.1103/physrevb.71.081307
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Predicted Raman spectra of Si[111] nanowires

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Cited by 36 publications
(44 citation statements)
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“…Its frequency was found to be highly dependent on the nanotubes diameter (Alvarez et al, 2000;Jorio et al, 2003;Maultzsch et al, 2005). The same mode has been observed even in semiconductor nanowires (Thonhauser & Mahan, 2005;Lange et al, 2008), and in both cases the inverse dependence on the nanowire diameter has been found. Assuming the nanowire as an infinitely long isotropic cylinder, the linear elasticity theory furnishes an expression of the RBM:…”
Section: Appearance Of New Modes: Surface and Breathing Modessupporting
confidence: 50%
“…Its frequency was found to be highly dependent on the nanotubes diameter (Alvarez et al, 2000;Jorio et al, 2003;Maultzsch et al, 2005). The same mode has been observed even in semiconductor nanowires (Thonhauser & Mahan, 2005;Lange et al, 2008), and in both cases the inverse dependence on the nanowire diameter has been found. Assuming the nanowire as an infinitely long isotropic cylinder, the linear elasticity theory furnishes an expression of the RBM:…”
Section: Appearance Of New Modes: Surface and Breathing Modessupporting
confidence: 50%
“…Thonhauser and Mahan find a similar dependence for Si[111] nanowires treated with a Stillinger-Weber-type model for isotropic elasticity theory [91]. There, the radial breathing mode frequency is 9) with r = µ λ + 2µ , the longitudinal speed of sound ν l and the elastic constants (λ, µ).…”
Section: Linear Elasticity Theorymentioning
confidence: 82%
“…[67] Yang and coworkers demonstrate the high density arrays of GaN nanowires with distinct geometric and physical properties by using MOCVD and appropriate substrate selection. The epitaxial orientation of wurtzite gallium nitride on (110) γ -LiAlO 2 single-crystal substrates is preferable in the orthogonal [1][2][3][4][5][6][7][8][9][10] and [001] directions, exhibiting triangular and hexagonal cross sections and drastically different optical emission (Figure 7.6). [68] …”
Section: Nitrides Nanowiresmentioning
confidence: 99%
“…[121] Thonhauser and Mahan also predicted the RBMs in Si nanowires based on the elastic theory. [8,133] They found that a low frequency Raman mode much lower than the first-order TO mode at ∼520 cm −1 became significant and blueshifted as the diameter of SiNWs decreased to a few nanometer regimes. This behavior is totally different with the redshift behavior of the high frequency mode because of phonon confinement effect.…”
Section: Radial Breathing Modesmentioning
confidence: 99%
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