The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

Present-day information technology is based mainly on incoherent processes in conventional semiconductor devices. To realize concepts for future quantum information technologies, which are based on coherent phenomena, a new type of 'hardware' is required. Semiconductor quantum dots are promising candidates for the basic device units for quantum information processing. One approach is to exploit optical excitations (excitons) in quantum dots. It has already been demonstrated that coherent manipulation between two excitonic energy levels--via so-called Rabi oscillations--can be achieved in single quantum dots by applying electromagnetic fields. Here we make use of this effect by placing an InGaAs quantum dot in a photodiode, which essentially connects it to an electric circuit. We demonstrate that coherent optical excitations in the quantum-dot two-level system can be converted into deterministic photocurrents. For optical excitation with so-called pi-pulses, which completely invert the two-level system, the current is given by I = fe, where f is the repetition frequency of the experiment and e is the elementary charge. We find that this device can function as an optically triggered single-electron turnstile.

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.