Predicted electronic properties of GaAs under hydrostatic pressure

Boucenna, M.; Bouarissa, N.

doi:10.1016/j.matchemphys.2003.12.011

Cited by 51 publications

(10 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was proposed that the formation of a pressure induced quantum dot under the tip could enhance electron-hole recombination, with the energy emitted in the form of phonons or photons. 9,10 In contrast to silicon pn junction experiments, 9,10 for GaAs, the conduction band edge moves up in energy under hydrostatic pressures, 44,45 leading to repulsion of the electrons away from the tip-sample contact region. This decreases the effect of the electron-hole pair recombination rate and is inconsistent with our observation of increasing excess friction versus applied load ͓Fig.…”

Section: Discussionmentioning

confidence: 92%

Electronic contribution to friction on GaAs: An atomic force microscope study

Park

Hendriksen

et al. 2008

Phys. Rev. B

View full text Add to dashboard Cite

The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50 nm radius in an atomic force microscope sliding against an n-type GaAs͑100͒ substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation ͑forward bias͒ with respect to depletion ͑reverse bias͒. We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

show abstract

Section: Discussionmentioning

confidence: 92%

Electronic contribution to friction on GaAs: An atomic force microscope study

Park

Hendriksen

et al. 2008

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…and 204 K c = [7]. Moreover, the pressure-and temperature-dependent effective masses e * ( ) m P T , , * ( ) hh m P T , and hh * ( ) m P T , for electrons and heavy-holes, respectively, used in our theoretical calculations are given by [7,17,18] 1 e P 0 g g 0…”

Section: Original Papermentioning

confidence: 99%

Hydrostatic‐pressure effects on the correlated electron–hole transition energies in GaAs–Ga_1–xAl_xAs semiconductor quantum wells

Raigoza

Duque

Reyes‐Gómez

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

The effects of hydrostatic pressure on the correlated e h -transition energies in single GaAs -Ga 1 x -Al x As quantum wells are calculated via a variational procedure, in the framework of the effective-mass and nondegenerate parabolic-band approximations. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. Both heavy-and light-hole exciton energies are obtained, and correlated e h -transition energies are found in good agreement with available experimental measurements.

show abstract

“…where r is the carrier-impurity distance, ε(P) and m*(P) are the pressure-dependent static dielectric constant and electron (or hole) effective mass [5][6][7], θ is the electric field angle relative to the x-axis, and V(P, x, y) is the potential barrier that confines the carrier in the wire region which is considered as zero within the wire region and…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga_1–xAl_xAs quantum well wires: Hydrostatic pressure and electric field effects

González¹,

López²,

Aguilar³

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

Using a variational procedure within the effective mass approximation, we have calculated the influence of an applied electric field and hydrostatic pressure on the shallow-impurity-related optical properties in a rectangular-transverse section GaAs -Ga 1-x Al x As quantum well wire. The electric field is applied in the plane of the transverse section of the wire and different angular directions have been considered. The results presented are for the impurity binding energy, its corresponding density of impurity states, and impurity-related transition energy and polarizability.

show abstract

Predicted electronic properties of GaAs under hydrostatic pressure

Cited by 51 publications

References 21 publications

Electronic contribution to friction on GaAs: An atomic force microscope study

Electronic contribution to friction on GaAs: An atomic force microscope study

Hydrostatic‐pressure effects on the correlated electron–hole transition energies in GaAs–Ga_1–xAl_xAs semiconductor quantum wells

Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga_1–xAl_xAs quantum well wires: Hydrostatic pressure and electric field effects

Contact Info

Product

Resources

About

Predicted electronic properties of GaAs under hydrostatic pressure

Cited by 51 publications

References 21 publications

Electronic contribution to friction on GaAs: An atomic force microscope study

Electronic contribution to friction on GaAs: An atomic force microscope study

Hydrostatic‐pressure effects on the correlated electron–hole transition energies in GaAs–Ga1–xAlxAs semiconductor quantum wells

Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga1–xAlxAs quantum well wires: Hydrostatic pressure and electric field effects

Contact Info

Product

Resources

About

Hydrostatic‐pressure effects on the correlated electron–hole transition energies in GaAs–Ga_1–xAl_xAs semiconductor quantum wells

Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga_1–xAl_xAs quantum well wires: Hydrostatic pressure and electric field effects