Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga1–xAlxAs quantum well wires: Hydrostatic pressure and electric field effects

González, Jorge Méndez; López, Sonia; Aguilar, Rodríguez; Porras‐Montenegro, N.; Duque, C.A.

doi:10.1002/pssb.200672538

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…The studies have shown a good agreement with experimental results for the pressure coefficient of the photoluminescence peak transitions. The works of González et al 27 and Kasapoglu et al 9, 28 associated with impurities in QW and QWW have shown that the binding energy increases linearly with hydrostatic pressure in the direct gap regime and for pressures above the crossing between the Γ and X conduction band minima – for the barrier material –, the binding energy grows to a maximum and then decreases. The latter behavior is due to the lowering of the effective potential that confines the carriers in the region of the QW, QWW, or QD.…”

Section: Introductionmentioning

confidence: 99%

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Tangarife

Duque

2010

phys. stat. sol. (b)

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In this work we study the binding energy of the ground state for hydrogenic donor impurity in laterally coupled GaAs/ Ga 1Àx Al x As double quantum well wires, considering the effects of hydrostatic pressure and under the influence of a growthdirection applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transversal section coupled by a central Ga 1Àx Al x As barrier. In the study of the effect of hydrostatic pressure, we have considered the G -X crossover in the Ga 1Àx Al x As material, which is responsible for the reduction of the height of the confining potential barriers. Our results are reported for several sizes of the structure (transversal sections of the wires and barrier thickness), and we have taken into account variations of the impurity position along the growth-direction of the heterostructure, together with the influence of applied electric fields. The main findings can be summarized as: (i) for symmetric quantum-well wires (QWW) the binding energy is an even function of the growth-direction impurity position and this even symmetry breaks in the case of asymmetric structures; (ii) the coupling between the two parallel wires increases with the hydrostatic pressure due to the negative slope of the confinement potential as a function of pressure; (iii) for impurities in the central barrier the binding energy is an increasing function of the hydrostatic pressure; (iv) depending on the direction of the applied electric field and the fixed impurity position, the binding energy can behave as an increasing or decreasing step function of the applied electric field, and finally (v) for appropriate values of the wires and barrier widths the results reproduce the exact limits of 2D and 3D hydrogenic atom as well as the limits of finite and infinite potential barrier quantum wells.

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Section: Introductionmentioning

confidence: 99%

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Tangarife

Duque

2010

phys. stat. sol. (b)

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“…Many experimental and theoretical investigations have been reported concerning the effects of hydrostatic pressure and compressive stress on shallow-donor impurity states in GaAs/Al x Ga 1−x As quantum wells (QWs) and quantum-well wires (QWWs). Gonzalez et al [7] studied the optical properties related to pressure in QWWs, and Odhiambo [8] reported a comparative study of hydrostatic pressure in single quantum wells (SQWs) and double quantum wells (DQWs). The -X crossover [9,10] was observed experimentally by Venkateswaran et al, who studied the pressure dependence of photoluminescence spectra in multiple quantumwell (MQW) structures.…”

Section: Introductionmentioning

confidence: 99%

Stress effects on the binding energy of shallow-donor impurities in symmetrical GaAs/AlGaAs double quantum-well wires

Bai

Liu

2007

J. Phys.: Condens. Matter

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The effects of applied compressive stress on the binding energies of shallow-donor impurity states with a finite confinement potential in symmetrical GaAs/AlGaAs double quantum-well wires (DQWWs) are studied theoretically using a variational procedure within the effective-mass approximation. Significant results for different wire and barrier widths, shallow-donor impurity positions, and compressive stress along the growth direction of the structure are obtained taking into account the Γ–X crossover and the image charge effects in the calculations. Our results show that the binding energy does not change appreciably with the size of the wire and barrier, or with the donor ion position. We also find that for stress values up to 13.5 kbar, the binding energy increases linearly with stress, while for stress values greater than 13.5 kbar, the binding energies show nonlinear behavior. Moreover, in the limit of double quantum wells (DQWs), our binding energy agrees with previously reported results. It is pointed out that compressive stress is an important factor in studies of the binding energies of shallow-donor impurity states in symmetrical GaAs/AlGaAs DQWWs.

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Hydrostatic pressure, temperature and aluminum concentration effects on the ground state of coupled donors in a GaAs–Ga_1−xAl_xAs quantum well

Fulla

Suaza

Marín

2015

Physica Status Solidi (b)

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Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga_1–xAl_xAs quantum well wires: Hydrostatic pressure and electric field effects

Cited by 5 publications

References 12 publications

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Stress effects on the binding energy of shallow-donor impurities in symmetrical GaAs/AlGaAs double quantum-well wires

Hydrostatic pressure, temperature and aluminum concentration effects on the ground state of coupled donors in a GaAs–Ga_1−xAl_xAs quantum well

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Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga1–xAlxAs quantum well wires: Hydrostatic pressure and electric field effects

Cited by 5 publications

References 12 publications

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Stress effects on the binding energy of shallow-donor impurities in symmetrical GaAs/AlGaAs double quantum-well wires

Hydrostatic pressure, temperature and aluminum concentration effects on the ground state of coupled donors in a GaAs–Ga1−xAlxAs quantum well

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Product

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Impurity‐related optical properties in rectangular‐transverse section GaAs–Ga_1–xAl_xAs quantum well wires: Hydrostatic pressure and electric field effects

Hydrostatic pressure, temperature and aluminum concentration effects on the ground state of coupled donors in a GaAs–Ga_1−xAl_xAs quantum well