Precision Adjustment of Probe Tilt Angle with RF Signal Detection Technique

Sakamaki, Ryo; Horibe, Masahiro

doi:10.1109/tim.2020.2991601

Cited by 15 publications

(12 citation statements)

References 27 publications

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“…A fully automatic probe station was constructed to apply the RSD technique. The details of the probe station have been published previously [22][23][24][25][26]. The measurements were conducted in two frequency bands, which ranged from 1 GHz to 110 GHz (100 GHz band) and from 220 GHz to 325 GHz (300 GHz band).…”

Section: A Measuring Instrumentsmentioning

confidence: 99%

“…Commercial impedance standard substrates (ISS) were used in this pre-cal process. The quality of the calibration process is not important for the stability of the measurement because the RSD technique only requires monitoring the Sparameter changes when the probe position shifts slightly [22,24]. Figure 3 show an image of the circuit substrate for the 100 GHz band.…”

Section: A Measuring Instrumentsmentioning

confidence: 99%

“…The probe tilt adjustment uses the resonance generated at the probe tips on a filled conductor [24]. For the GSG probe, an inductance should exist between each ground and signal probe tips when all the GSG probe tips are in good contact with the filled-conductor pad.…”

Section: Precision Probe Alignment Techniquementioning

confidence: 99%

“…Although the image analysis technique can avoid the second issue, other issues cannot be avoided. Our research group developed a precision probe alignment technique that determines the probe position by analyzing the measured S-parameter [22][23][24]. This technique does not require an optical microscope image to determine the probe position in principle.…”

Section: Introductionmentioning

confidence: 99%

“…The developed probing system significantly improved the reproducibility of on-wafer measurements. The alignment technique has demonstrated that in the frequency range up to 340 GHz [24][25][26]. The RSD technique is expected to solve three of the abovementioned problems in the long-term stability test of on-wafer measurements because the contact position is defined at the actual contact point, which is not at the apex of the probe silhouette.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

Sakamaki

Horibe

2021

IEEE Trans. Instrum. Meas.

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Section: A Measuring Instrumentsmentioning

confidence: 99%

Section: A Measuring Instrumentsmentioning

confidence: 99%

Section: Precision Probe Alignment Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

Sakamaki

Horibe

2021

IEEE Trans. Instrum. Meas.

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On overtravel and skate in cantilever-based probes for on-wafer measurements

Arscott¹

2022

J. Micromech. Microeng.

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Due to the deformability of a microcantilever-based probe, there is an interesting and subtle interplay between the probe overtravel, the tip skate on the surface, and the ultimate tangency of the tip of the probe with the wafer surface. The relationship between these parameters is described here. The scalable model is tested using a macroscopic cantilever and found to be accurate in its predictions. In addition, to avoid potential skate-induced damage to metallisation, the idea of zero-skate using a cantilever-based probe has been introduced; minimal skate is demonstrated using a macroscopic cantilever—the skate can be reduced by a factor of 0.176. As the model is scalable, this information could be of use to the designer of emerging miniature MEMS microcantilever-based surface contact probes destined for on-wafer electrical measurements or the test engineer concerned with on-wafer probe contacting—where skate and overtravel are important practical concerns having repercussions in electrical contact quality. Some predictions of the modelling for microcantilever-based probes are provided.

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Quantifying and correcting tilt-related positioning errors in microcantilever-based microelectromechanical systems probes

Arscott

2023

J. Micromech. Microeng.

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The impact of tilt-related errors on the positioning of microcantilever-based microelectromechanical systems (MEMS) on-wafer electrical probes, having multiple contact pads, is quantified and investigated here. A tilt error associated with probe roll results in the probe contact pads not being parallel to the approaching surface as a downward overtravel is imposed—this leads to one probe pad making contact with the surface before the others. In a MEMS-based probe, the analysis of the impact of roll error angle must consider both the bending and the torsion of the flexible cantilever as the overtravel is increased—something which eventually results in all pads being in contact with the surface, but not with the same contact force. An original mathematical description of the problem is presented. By making some assumptions, the analytical modelling enables the derivation of elegant equations relating the roll error angle and the cantilever deflection to achieve planarity of the cantilever apex with the underlying surface. The modelling predicts probe tip planarity for rectangular and trapezoidal shaped probes. The predictions of the modelling are tested by using macroscopic cantilevers—excellent agreement between modelling and experiment is demonstrated. The macroscopic experimental setup reveals interesting behaviour concerning a bending/twisting, tilted cantilever in contact with—and skating across—an underlying surface. The experimental findings also indicate the pertinence of the modelling for the potential use with understanding the behaviour of microscopic cantilevers—such as MEMS-based probes—similarly in contact with a surface. A flexible microcantilever enables a torsional compensation of the roll error angle. It also enables a protocol where the roll error angle can be corrected. The design geometry of the probe tip will determine which approach is best suited. In principle, the modelling is scalable to MEMS probes composed of silicon-based cantilevers.

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Precision Adjustment of Probe Tilt Angle with RF Signal Detection Technique

Cited by 15 publications

References 27 publications

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

On overtravel and skate in cantilever-based probes for on-wafer measurements

Quantifying and correcting tilt-related positioning errors in microcantilever-based microelectromechanical systems probes

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