Precise Taper-Angle-Control of Via Holes for Reliable Scaled-Down Low-k/Cu Interconnects

Kume, I.; Inoue, N.; Saito, Shinobu; Furutake, N.; Kawahara, J.; Hayashi, Y.

doi:10.1143/jjap.49.04db04

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…Few papers, however, have discussed the effects of the etching profiles in the VF-DD with low-k SiOCH on its performance-variability and reliability. 12,13) In this work, we investigated the effects of the RIE process, in terms of etching selectivity, on the variability and reliability of Cu DDIs with a C-rich porous low-k film such as a molecular-pore-stack (MPS) SiOCH film (k ¼ 2:55). We focus on the chemical composition of C/Si ratio in the low-k SiOCH films and etching gas chemistry to achieve high selectivity in the RIE to open via and trench patterns in the VF-DD process.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films

Kume¹,

Ueki²,

Inoue³

et al. 2011

Jpn. J. Appl. Phys.

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Highly selective dry-etching processes are developed for conventional via-first (VF) pattering sequences to fabricate reliable Cu dual-damascene interconnects (DDI) in carbon-rich low-k films, such as a molecular-pore-stack (MPS) SiOCH film (k = 2.55). The carbon-rich MPS film, which had excellent endurance against plasma-processes, acted as etching stopper during hard-mask (HM)-etching on it, and the high selectivity of trench-HM etching reduced variability of over-etching depth in the MPS film. This effect reduced variability in trench-depth in the MPS film, or interconnect characteristics such as capacitance–resistance (C–R) time delay. The via yield and reliability were influenced also by via-etch selectivity of MPS against SiCN cap underlain. We found that the SiCN thickness remained after the via etch should be greater than 10 nm to prevent Cu from oxidation by O2 ashing step followed. Chemical-reaction-enhanced gas chemistry in N2–CF X –Ar system, i.e., high N2/Ar ratio under limited CF X supply, increased the etching selectivity of MPS to keep enough thickness of SiCN. Early-failure-mode in electro-migration test was suppressed by the high selective via-etch. Precise selectivity control for robust carbon-rich low-k films was very important to achieve the low variability and high reliability of scaled-down Cu interconnects.

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Section: Introductionmentioning

confidence: 99%

Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films

Kume¹,

Ueki²,

Inoue³

et al. 2011

Jpn. J. Appl. Phys.

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“…An interconnect structure using molecular-pore stacking (MPS; k ¼ 2:53) is one of the best candidates to meet the demand. [3][4][5][6][7][8][9][10][11][12][13][14][15] Its properties are listed in Table I, [3][4][5][6][7][8][9] and the feature of the precursor and deposition scheme are shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Oshida¹,

Kume²,

Katsuyama³

et al. 2011

Jpn. J. Appl. Phys.

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We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows the Poisson level spacing distribution. Closely above the critical point, p(s) can be described in terms of an intermediate distribution between Poisson and the GOE, the Brodydistribution. Furthermore, below the critical point p(s) can be given with the help of the regularized Gamma-function. Motivated by these results, we analyse the behaviour of p(s) in real networks such as the internet, a word association network and a protein-protein interaction network as well. When the giant component of these networks is destroyed in a node deletion process simulating the networks subjected to intentional attack, their level spacing distribution undergoes a similar transition to that of the E-R graph.

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Highly reliable molecular-pore-stacking (MPS)/Cu interconnects featuring best combination of post-etching treatment and resputtering processes

Oshida¹,

Kume²,

Katsuyama³

et al. 2014

Microelectronic Engineering

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Precise Taper-Angle-Control of Via Holes for Reliable Scaled-Down Low-k/Cu Interconnects

Cited by 6 publications

References 14 publications

Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films

Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Highly reliable molecular-pore-stacking (MPS)/Cu interconnects featuring best combination of post-etching treatment and resputtering processes

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