Precise chemical analysis development for silicon wafers after rapid thermal processing

Briantseva, Tatiana A.; Lebedeva, Z.M.; Lioubtchenko, Dmitri; Markov, I. A.; Nolan, M.; Perova, Tatiana S.; Moore, Robert A.

doi:10.1016/s0169-4332(99)00509-7

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…The Al on GaAs samples with and without laser treatment was also studied by means of precise chemical analysis (PCA). The latter technique, based upon photometric chemical analysis, used in this study has been described earlier [2,6]. Samples which were typically 5mm x 5mm were cleaved from both processed and unprocessed areas of "epiready" GaAs (001) substrate wafers.…”

Section: Figure 4 Ga As and Al Concentration Dependences Upon H/r Ratiomentioning

confidence: 99%

Surface Composition Transformation of Thin Film Based on Al Grown by CBE on the (001) GaAs Surface Due to Laser Assistance

Lioubtchenko

Briantseva

Lebedeva

et al. 2011

DDF

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It is shown that laser-assisted growth of Al films using the CBE method results in remarkable surface composition transformations. The values of the laser reflectivity are slightly correlated with the composition or with the metal thickness. The energy characteristics of the reactions guide the reflectivity changes, together with thickness changes. It was shown that the composition within the laser spot is different from that outside the laser spot due to the destruction of compounds under laser exposure.

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Section: Figure 4 Ga As and Al Concentration Dependences Upon H/r Ratiomentioning

confidence: 99%

Surface Composition Transformation of Thin Film Based on Al Grown by CBE on the (001) GaAs Surface Due to Laser Assistance

Lioubtchenko

Briantseva

Lebedeva

et al. 2011

DDF

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“…Unfortunately, the implantation also has some disadvantages, such as a) more lattice defects are produced by the ion implantation; and b) the depth of the implanted ions in the device would have a projection straggling σ p . These disadvantages can mostly be ectified by a proper annealing process [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

Li¹,

Li²,

Wang³

et al. 2011

Chinese Phys. C

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The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.

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Thermomechanical strains in small-size Au–GaAs thin film structures

Briantseva

Lioubtchenko²,

Lyubchenko

et al. 2000

Applied Surface Science

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Precise chemical analysis development for silicon wafers after rapid thermal processing

Cited by 3 publications

References 4 publications

Surface Composition Transformation of Thin Film Based on Al Grown by CBE on the (001) GaAs Surface Due to Laser Assistance

Surface Composition Transformation of Thin Film Based on Al Grown by CBE on the (001) GaAs Surface Due to Laser Assistance

Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

Thermomechanical strains in small-size Au–GaAs thin film structures

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