The Photometric Chemical Analysis technique was used to evaluate the amount of "free" noninterconnected Si atoms, produced at the surface of crystalline <100> oriented silicon by proximity Rapid Thermal Processing (RTP) using Spin-On Dopants (SOD). Secondary Ion Mass Spectroscopy (SIMS) was used to investigate the elemental composition at the silicon surface after RTP. Photometric Chemical Analysis measured quantitatively the "free" boron and phosphorus atoms that were detected by the SIMS measurement. It is shown that thermal treatments considerably change the amount of "free" silicon, boron and phosphorus atoms on the silicon surface as measured by photometry.
The article discusses the issues of formation of crop density and structure of spring wheat crop, depending on the varietal characteristics of gray forest soils in the Republic of Mari-El. The varieties Simbirtsit, Amir and Ekada-109 were studied. The paper displays the results of the analysis of seeds germination formimg, the preservation of plants and elements of the structure of the crop.
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