Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

Abstract

The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.

Theoretical analysis of the electromagnetic field inside an anomalous-dispersion microresonator under synthetical pump

“…Moreover, in addition to the large mode spacing, the Kerr combs also show the advantages of simplicity, small size, high degree of integration, and low power consumption. [16,17] Therefore, as the supplement for the traditional mode-locked laser-based frequency combs, the Kerr combs with high repetition frequencies are desirable for many applications, for example, calibration of astronomical spectrograph [18] and coherent terabit communications. [19] Meanwhile, the generation of the optical Kerr frequency combs has also been studied theoretically.…”