Precipitation during zinc diffusion in gallium arsenide

Rhines, W. D.; Stevenson, David A.

doi:10.1007/bf02666162

Cited by 4 publications

(1 citation statement)

References 38 publications

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“…Precipitates and dislocations have been observed in several I I I -V compounds and have been suggested as potential carrier recombination centers (8). Since the precipitates could be smaller than 500A in diameter, transmission electron microscopy (TEM) provides the only method for definitive examination.…”

Section: Experimental Techniquesmentioning

confidence: 99%

Microstructural Observations on Gallium Nitride Light-Emitting Diodes

Maruska

Anderson²,

Stevenson³

1974

J. Electrochem. Soc.

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Microstructural observations, utilizing optical microscopy, scanning electron microscopy, and transmission electron microscopy, were made on gallium nitride false(normalGaNfalse) metal/insulator/n‐type semiconductor (m‐i‐n) light‐emitting diodes. The normalGaN films from which the diodes were fabricated were grown by heteroepitaxial chemical vapor deposition on sapphire substrates, and consisted of an undoped n‐layer and a Mg‐doped i‐layer; a metal contact was subsequently placed on the surface of the i‐layer forming an m‐i and an n‐i junction. Significant observations include the following: optical microscopy and scanning electron microscopy show a faceted surface of the layers and the existence of cell boundaries; the cell boundaries result from the coalescence of the individual crystallites formed on the substrate in the early stages of growth; x‐ray Laue patterns consist of spots that are slightly diffuse, indicating that the cells are only slightly misoriented with respect to their adjoining cells; light emission occurs as a pattern of small discrete spots and this pattern of spots correlates with the faceted structure of the film; the light emanates from the cathode regions (the i‐n junction with forward bias and the m‐i junction with reverse bias); steep electrical potential gradients (∼105 V/cm), measured using line scan techniques in the scanning electron microscope, occur at the m‐i and the n‐i junctions. The observations are consistent with an impact ionization model for light emission.

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Section: Experimental Techniquesmentioning

confidence: 99%

Microstructural Observations on Gallium Nitride Light-Emitting Diodes

Maruska

Anderson²,

Stevenson³

1974

J. Electrochem. Soc.

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Diffusion in Semiconductors

CaseyJr.¹,

Pearson

1975

Point Defects in Solids

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Etch pits and dislocations of Ga1−xAlxAs liquid phase epitaxial layers

Komiya

Akita

Nishitani

et al. 1976

Journal of Applied Physics

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The etch pits of Ga1−xAlxAs are revealed by the etchant (H2O/H2O2/CH3COOH/HF) and it is verified that these etch pits correspond faithfully to dislocations using x-ray transmission topographs. The shapes of dislocation etch pits which are revealed by the etchant (1 H2O/1 H2O2/2 CH3COOH/0.5 HF) are either conical on the (100) face of Ga1−xAlxAs with x≳0.1 or pyramidal on the (100) face of Ga1−xAlxAs with x=0.05.

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Precipitation during zinc diffusion in gallium arsenide

Cited by 4 publications

References 38 publications

Microstructural Observations on Gallium Nitride Light-Emitting Diodes

Microstructural Observations on Gallium Nitride Light-Emitting Diodes

Diffusion in Semiconductors

Etch pits and dislocations of Ga1−xAlxAs liquid phase epitaxial layers

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