Power stage for permanent magnet synchronous motors in high current automotive applications

Graovac, D.; Purschel, M.; Kiep, Andreas

doi:10.1109/epe.2007.4417489

Cited by 36 publications

(56 citation statements)

References 3 publications

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“…The circuit scheme of the test setup is shown in Fig. 15(b), a 1700V/900A IGBT module from [33] is applied which is corresponding to six chips in parallel and can represent the mean condition shown in Fig. 7.…”

Section: Verifications and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

Bahman

Bęczkowski

et al. 2015

IEEE Trans. Power Electron.

160

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Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal models, only the electrical loadings are focused and treated as design variables, while the device rating is normally predefined by experience with limited design flexibility. Consequently, a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, thermal impedance, and silicon area of insulated gate bipolar transistor (IGBT) is mathematically established. By this new modeling approach, all factors that have impacts to the loss and thermal profiles of the power devices can accurately be mapped, enabling more design freedom to optimize the efficiency and thermal loading of the power converter. The proposed model can be further improved by experimental tests, and it is well agreed by both circuit and finite element method (FEM) simulation results. Index Terms-Finite element method (FEM), insulated gate bipolar transistor (IGBT), power semiconductor, reliability, thermal model.

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Section: Verifications and Discussionmentioning

confidence: 99%

“…where V ce/f is the conduction voltage of the IGBT module and I ce/F is the corresponding load current, their relationship can be acquired from the device datasheets [33], or by experimental characterization [16], [19].…”

Section: A Conduction Lossmentioning

confidence: 99%

Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

Bahman

Bęczkowski

et al. 2015

IEEE Trans. Power Electron.

160

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“…To check the proposed converter's efficiency for the presented simulation case study, the conduction and switching power loss calculations presented in [23] are adopted for the simulated case study. A 4.5 kV, 800 A (5SNA 0800J450300) IGBT module [24] is selected.…”

Section: Simulationmentioning

confidence: 99%

A modular multilevel DC‐DC converter with self‐energy equalization for DC grids

Elserougi

Abdelsalam

Massoud

et al. 2021

IET Renewable Power Gen

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Medium-/High Voltage DC grids are interesting for the integration of renewable energy sources. DC-DC conversion systems are highly needed for the development of DC grids. Recently, Modular Multilevel Converter (MMC) is the most promising technology for medium-/high-voltage applications, but employing the conventional MMC with DC output voltage leads to diversion in the Submodule (SM) capacitor voltages, that is energy drift. This paper proposes a modified modular multilevel DC-DC converter with self-energy equalization, which ensures successful DC-DC conversion with balanced capacitors voltages. In the modified topology, clamping Insulated Gate Bipolar Transistors (IGBTs) are employed in each arm to enable parallel-connection of the capacitors in the same arm. During the operation (equalization period), the parallel-connected upper capacitors are connected to the parallel-connected lower capacitors in each leg through a small limiting inductor to transfer energy between the arms to ensure balanced capacitor voltages. The proposed configuration, along with the operational concepts, mathematical analysis, and design, are presented. Finally, simulation and experimental results are presented for validation. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…According to References , the switching loss is as follows:

P_{SW ((), on)} = \frac{V_{Off} I_{On}}{2} ((), t_{ri} + t_{fu}) f_{S}

P_{italicSW ((), off)} = \frac{V_{Off} I_{On}}{2} ((), t_{ru} + t_{fi}) f_{S}

where t ri and t ru are rising time and falling time. t fu and t fi are also the transient times which can be calculated from datasheets of the switches.…”

Section: The Efficiency Analysismentioning

confidence: 99%

A DC–DC boost converter with high voltage gain integrating three‐winding coupled inductor with low input current ripple

Moradpour

Tavakoli

2020

Int Trans Electr Energ Syst

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Summary In this paper, a new DC–DC converter with high voltage gain is proposed. One inductor, three capacitors, a three‐winding coupled inductor, three diodes and one power switch is employed in the presented structure. Because of connecting inductor, the input current of the presented converter is continuous with low ripple. The stored energy in the leakage inductor is recycled by a passive voltage clamp. The voltage clamp also reduces the voltage stress on the main power switch. Since the voltage stress of the switch is low, a switch with low on‐resistance (RDS(ON)) can be used in the proposed converter which reduces the conduction loss. High efficiency, low voltage stress, low input current ripple, low voltage stress on the power switch and zero current switching of the switch are the advantages of the proposed converter. The proposed converter is analyzed in steady state condition and the experimental results are presented to justify the feasibility of the proposed topology.

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Power stage for permanent magnet synchronous motors in high current automotive applications

Cited by 36 publications

References 3 publications

Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

A modular multilevel DC‐DC converter with self‐energy equalization for DC grids

A DC–DC boost converter with high voltage gain integrating three‐winding coupled inductor with low input current ripple

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