Abstract-Detailed thermal dynamics of high power IGBT modules are important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behavior in the IGBTs: The typically used thermal model based on one-dimensional RC lumps have limits to provide temperature distributions inside the device, moreover some variable factors in the real-field applications like the cooling and heating conditions of the converter cannot be adapted. On the other hand, the more advanced threedimensional thermal models based on Finite Element Method (FEM) need massive computations, which make the long-term thermal dynamics difficult to calculate. In this paper, a new lumped three-dimensional thermal model is proposed, which can be easily characterized from FEM simulations and can acquire the critical thermal distribution under long-term studies. Meanwhile the boundary conditions for the thermal analysis are modeled and included, which can be adapted to different realfield applications of power electronic converters. Finally, the accuracy of the proposed thermal model is verified by FEM simulations and experimental results show a good agreement.

His current research interests include reliability, modeling and application of power electronics in renewable energy systems.

Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal models, only the electrical loadings are focused and treated as design variables, while the device rating is normally predefined by experience with limited design flexibility. Consequently, a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, thermal impedance, and silicon area of insulated gate bipolar transistor (IGBT) is mathematically established. By this new modeling approach, all factors that have impacts to the loss and thermal profiles of the power devices can accurately be mapped, enabling more design freedom to optimize the efficiency and thermal loading of the power converter. The proposed model can be further improved by experimental tests, and it is well agreed by both circuit and finite element method (FEM) simulation results. Index Terms-Finite element method (FEM), insulated gate bipolar transistor (IGBT), power semiconductor, reliability, thermal model.

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