2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121) 2000
DOI: 10.1109/ultsym.2000.922680
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Power handling and temperature coefficient studies in FBAR duplexers for the 1900 MHz PCS band

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Cited by 54 publications
(32 citation statements)
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“…Both processes of surface micromachining and backside etching require etching the unwanted part, which is a relatively expensive and very complex fabrication process. (4)(5)(6)(7)(8)(9) Moreover, the SMR device is attracting attention because of its simple structure that includes a substrate, Bragg reflector, electrode, and piezoelectric layer manufactured through a process that is compatible with the IC industry. (10)(11)(12) It has the following advantages: it is manufactured through planar processes and possesses a robust structure.…”
Section: Introductionmentioning
confidence: 99%
“…Both processes of surface micromachining and backside etching require etching the unwanted part, which is a relatively expensive and very complex fabrication process. (4)(5)(6)(7)(8)(9) Moreover, the SMR device is attracting attention because of its simple structure that includes a substrate, Bragg reflector, electrode, and piezoelectric layer manufactured through a process that is compatible with the IC industry. (10)(11)(12) It has the following advantages: it is manufactured through planar processes and possesses a robust structure.…”
Section: Introductionmentioning
confidence: 99%
“…rf mechanical resonators are constantly improving in quality factors, integration capabilities and size, allowing more-efficient, lower-cost wireless communications components, such as filters, duplexers, or mixers. [1][2][3][4] This progress in design and fabrication demands an accompanying development of experimental techniques which are suitable for the electromechanical characterization of the emerging prototypes. Several laser interferometer based methods have been proposed.…”
mentioning
confidence: 99%
“…The resonator considered here is an Agilent Technologies' film bulk acoustic resonator ͑FBAR͒, which consists of a free-standing piezoelectric AlN pentagonal membrane with side lengths about 100 m and overlapping Mo electrodes. 1,3,4 The membrane is designed to have a main thickness vibration mode with a resonance frequency around 1.9 GHz. Before the SAFM experiments, electrical characterization of the particular device under study showed a resonance peak at 1.898 GHz in the power reflection coefficient.…”
mentioning
confidence: 99%
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“…High power density ultrasonic transducers are used in a variety of devices for drilling [1], cleaning [2], welding [3], filters [4], and novel transformers [5]. In general driving piezoelectrics at high power levels introduces nonlinear and thermal effects that need to be understood in order to accurately measure and control the transducer.…”
Section: Introductionmentioning
confidence: 99%