2003
DOI: 10.1109/jssc.2003.811991
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Power efficient charge pump in deep submicron standard cmos technology

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Cited by 225 publications
(85 citation statements)
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“…5b. These dual-branch structures were introduced to lower ripples in the CTS design (Kleveland, 2002;New et al, 2012) and later evolved into latch-based designs (Nakagome et al, 1991;Gariboldi and Pulvirenti, 1994;1996;Favrat et al, 1998;Pelliconi et al, 2003;Ker et al, 2006;Che et al, 2009;Chen et al, 2010;Ulaganathan et al, 2012;Peng et al, 2014;Kim et al, 2015) which are currently gaining popularity. These structures have V OUT similar to Equation 1 but with reduced charge transfer intervals of T/2 (Palumbo and Pappalardo, 2010), circuit minimization with smaller C PUMP values and half the ripple, V R compared to single branch CPs where V R is expressed as V R = I OUT T/[2(C OUT +C PUMP )] (Pan and Samaddar, 2010) assuming C OUT >> C PUMP .…”
Section: Dual-branch Charge Pumpmentioning
confidence: 99%
See 1 more Smart Citation
“…5b. These dual-branch structures were introduced to lower ripples in the CTS design (Kleveland, 2002;New et al, 2012) and later evolved into latch-based designs (Nakagome et al, 1991;Gariboldi and Pulvirenti, 1994;1996;Favrat et al, 1998;Pelliconi et al, 2003;Ker et al, 2006;Che et al, 2009;Chen et al, 2010;Ulaganathan et al, 2012;Peng et al, 2014;Kim et al, 2015) which are currently gaining popularity. These structures have V OUT similar to Equation 1 but with reduced charge transfer intervals of T/2 (Palumbo and Pappalardo, 2010), circuit minimization with smaller C PUMP values and half the ripple, V R compared to single branch CPs where V R is expressed as V R = I OUT T/[2(C OUT +C PUMP )] (Pan and Samaddar, 2010) assuming C OUT >> C PUMP .…”
Section: Dual-branch Charge Pumpmentioning
confidence: 99%
“…Hence, the CPs either uses switches or capacitors efficiently, but not simultaneously superior in both asymptotes (Seeman and Sanders, 2008). Recently, Bazzini et al (2012) proposes an all PMOS Double Ladder CP which lowers output resistance, R OUT(OPT) Pelliconi et al (2003) design with the i-stage pumping capacitor, C PUMP(i) = (N+1-i)/(N(N+1)C TOT (Bazzini et al, 2012) chosen to minimize R OUT (Makowski and Maksimovic, 1995). While this enhanced structure has a high VCE at 93%, it still suffers a low PCE at 52%.…”
Section: Miscellaneous Charge Pumpsmentioning
confidence: 99%
“…The efficiencies for solutions with on-chip inductors and pump capacitors are highly dependent on the load conditions and voltage increase ratio. For a converter with an on-chip inductor an efficiency of 28% has been reported [21], while the capacitive pump has achieved 65% [23]. The large value of the target capacitance of the piezoelectric transducer (nF-range) further hampers the efficiency of an on-chip solution, as the achievable capacitance and inductance values are low.…”
Section: Pulse Generation Strategymentioning
confidence: 99%
“…The simple structure of it makes charge pump popular in applications such as read/write operation of EEPROM and MEMS MIC, which have relatively low load current with moderate ripple requirements [1][2][3][4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, for higher output voltage, more stages than the theoretically expected is required. Several advanced designs with focuses on CMOS reliability, higher load current driving ability, and small chip area [3][4][5] have been published. Nevertheless, those designs are not suitable for the applications where low input voltage is given and when transistors have relatively high threshold voltages.…”
Section: Introductionmentioning
confidence: 99%