Power Cycling Reliability of Power Module: A Survey

Durand, Camille; Klingler, Markus; Coutellier, Daniel; Naceur, Hakim

doi:10.1109/tdmr.2016.2516044

Cited by 168 publications

(71 citation statements)

References 66 publications

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“…Thermal cycling magnitude strongly influences semiconductors' lifetime [14] and [15]. Experimental data showing the closed loop limitation of the junction temperature have been presented.…”

Section: Active Thermal Controlmentioning

confidence: 99%

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Stella

Pellegrino

Armando

et al. 2018

IEEE Trans. on Ind. Applicat.

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“…Thermal cycling magnitude strongly influences semiconductors' lifetime [14] and [15]. Experimental data showing the closed loop limitation of the junction temperature have been presented.…”

Section: Active Thermal Controlmentioning

confidence: 99%

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Stella

Pellegrino

Armando

et al. 2018

IEEE Trans. on Ind. Applicat.

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“…In other words, regardless of the selected weighting factor, the temperature profile when using the proposed algorithm will always have a slope that is under the one when using the fixed switching frequency. The importance of this property comes from the fact that the lifetime of the inverter is inversely proportional to the junction temperature difference [37][38][39]. To further highlight the significance of the proposed algorithm, the California Energy Commission (CEC) efficiency of the inverter is measured under the fixed and VSF algorithms, the CEC efficiency is 97.3% using the proposed VSF algorithm, and 96.39% with the fixed fsw.…”

Section: The Experimental Resultsmentioning

confidence: 99%

Section: The Experimental Resultsmentioning

confidence: 99%

Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

et al. 2017

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Enhancing the performance of the voltage source inverters (VSIs) without changing the hardware structure has recently acquired an increased amount of interest. In this study, an optimization algorithm, enhancing the quality of the output power and the efficiency of three-phase grid connected VSIs is proposed. Towards that end, the proposed algorithm varies the switching frequency (f sw ) to maintain the best balance between switching losses of the insulated-gate-bipolar-transistor (IGBT) power module as well as the output power quality under all loading conditions, including the ambient temperature effect. Since there is a contradiction with these two measures in relation to the switching frequency, the theory of multi-objective optimization is employed. The proposed algorithm is executed on the platform of Altera ® DE2-115 field-programmable-gate-array (FPGA) in which the optimal value of the switching frequency is determined online without the need for heavy offline calculations and/or lookup tables. With adopting the proposed algorithm, there is an improvement in the VSI efficiency without degrading the output power quality. Therefore, the proposed algorithm enhances the lifetime of the IGBT power module because of reduced variations in the module's junction temperature. An experimental prototype is built, and experimental tests are conducted for the verification of the viability of the proposed algorithm.

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“…The transistors and the metallized substrate of IGBT are soldered onto a base plate and completely immersed in silicone gel, which provides a barrier to electrical discharge and ensures good thermal and mechanical properties [2][3][4]. Silicone polymer gels present some characteristic features [5].…”

Section: Introductionmentioning

confidence: 99%

Analysis of electrical tree inception in silicone gels

Mancinelli

Cavallini

Dodd

et al. 2017

IEEE Trans. Dielect. Electr. Insul.

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This work assesses the initial and crucial part of electrical treeing degradation, the inception stage, focusing on its dependence on applied voltage waveform and frequency. Tests have been performed on needle-plane configuration samples in solids and gels. A physical model has been formulated through an adaptation of an established theory for solids in which electrical tree inception is related to damage-producing injection currents. The voltage rise time appeared to be the most important parameter influencing the tree inception in the gel, while in the solid material the frequency is more relevant. The analysis leads to the conclusion that tree inception in gels is due to a single highenergy event, in contrast to what is commonly known for solids where damage accumulation takes place. A tree inception model is proposed for the gel, in which initiation is driven by a pressure wave generated by the electric field and the space charge injected into the sample. The model fits the experimental data and may be used to predict the tree initiation for different waveforms and voltage values.

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Power Cycling Reliability of Power Module: A Survey

Cited by 168 publications

References 66 publications

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

Analysis of electrical tree inception in silicone gels

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