Power-Constrained Third-Order Active Notch Filter Applied in IR-LNA for UWB Standards

Lin, Jui-Yi; Chiou, Hwann-Kaeo

doi:10.1109/tcsii.2010.2092825

Cited by 24 publications

(16 citation statements)

References 8 publications

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“…This FOM includes the most relevant parameters for evaluating LNAs for low‐power, high‐gain, low‐noise, and wideband applications. Table 1 is a summary of the implemented CMOS UWB LNA, and recently reported state‐of‐the‐art CMOS UWB LNAs [4–6, 11–14]. Compared with other works, our CMOS LNA exhibits the lowest power, the highest FOM, and excellent stop‐band rejection.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

A low‐power 3.2–9.7 GHz ultra‐wideband low‐noise amplifier with excellent stop‐band rejection using 0.18‐μm CMOS technology

Chang

Lin

2012

Micro & Optical Tech Letters

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A low‐power 3.2–9.7 GHz low‐noise amplifier (LNA) with excellent stop‐band rejection by 0.18‐μm CMOS technology is demonstrated.High stop‐band rejection is achieved using a planar passive band‐pass filter with three finite transmission zeros (in the input terminal of the common‐gate LNA), one of which (ωz1 = 0.9 GHz) is in the low‐frequency stop‐band and the other two (ωz3 and ωz5) are in the high‐frequency stop‐band. In addition, an active notch filter is used in the output terminal of the LNA to introduce another low‐frequency stop‐band transmission zero (ωz2) at 2.4 GHz. The LNA consumes 4.68 mW and achieves S11 of −10 to −39.5 dB, S21 of 9.3 ± 1.5 dB, and an average noise figure (NF) of 6 dB over the 3.2–9.7 GHz band. Moreover, the stop‐band interferers can be effectively attenuated. The measured stop‐band rejection is better than 21.6 dB for frequencies DC ∼2.5 GHz and 11.2–20 GHz. The corresponding stop‐band rejection at 0.9, 1.8, 2.4, 17.6, and 19.5 GHz are 53.3, 26.4, 26.5, 60, and 59.5 dB, respectively. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1253–1261, 2012

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Section: Measurement Results and Discussionmentioning

confidence: 99%

A low‐power 3.2–9.7 GHz ultra‐wideband low‐noise amplifier with excellent stop‐band rejection using 0.18‐μm CMOS technology

Chang

Lin

2012

Micro & Optical Tech Letters

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“…Several UWB LNAs using an integrated notch filter for interferer rejection have been presented [4,5,6,7,8,9]; however, they suffer from a high noise figure (NF), and the input impedance of the UWB LNA is strongly affected by the input notch filter [4,5]. The notch filter with an active inductor requires additional current consumption [6,7,8,9].…”

Section: Introductionmentioning

confidence: 99%

“…The notch filter with an active inductor requires additional current consumption [6,7,8,9]. In this letter, a CMOS 3-5 GHz UWB LNA with an integrated bandpass feedback stage for 2.4 GHz interferer rejection is presented.…”

Section: Introductionmentioning

confidence: 99%

Ultra-wideband CMOS low-noise amplifier with active interferer rejection

Hwang

Kwon

2016

IEICE Electron. Express

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A CMOS 3-5 GHz ultra-wideband (UWB) low-noise amplifier (LNA) with an integrated active interferer rejection is presented. The LNA eliminates the out-band 2.4 GHz interferers without deteriorating the input matching and gain by employing the active tunable bandpass feedback loop to produce a notch at the interferer frequencies. The proposed LNA is fabricated using a 0.18 µm CMOS process. The 3-5 GHz UWB LNA with the integrated bandpass feedback loop achieves an out-band 2.4 GHz interferer rejection of 29.2 dB, a power gain of 15.3 dB, and a minimum noise figure of 4 dB with a power consumption of 9.1 mW.

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“…4.2.5 illustrates the worst-case numbers of harmonic mixing in the passband. The key measured parameters of both filters are compared with two Q-enhanced notch filters [7,8]. Our method provides a higher dynamic range and is more robust to large blockers and PVT variations than the Q-enhancement technique.…”

mentioning

confidence: 99%

“…Measurement results for the differential notch filter is presented in Fig. 4 filters [7,8]. Our method provides a higher dynamic range and is more robust to large blockers and PVT variations than the Q-enhancement technique.…”

mentioning

confidence: 99%

8-Path tunable RF notch filters for blocker suppression

Ghaffari

Klumperink

Nauta

2012

2012 IEEE International Solid-State Circuits Conference

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Abstract:Periodically time-variant passive 8-path notch filters are demonstrated in 65nm CMOS technology, with a notch frequency tunable from 100MHz to 1.2GHz with a clock signal. In a 50Ω environment, filter insertion loss in the pass band is 1.4-2.8dB, while the rejection at the notch frequency is >20dB.Given their P 1dB > +2dBm and IIP3> +17dBm, the filters can protect radio receivers from blocking over a wide tuning range. TextThe huge growth of the number of wireless devices makes wireless coexistence an increasingly relevant issue. If radios operate in close proximity, blockers as strong as 0dBm may occur, driving almost any receiver in compression (note that 0dBm in 50Ω corresponds to a pk-pk voltage of half a 1.2V supply). Thus RF blocker filtering is highly wanted. However, fixed filters are undesired when aiming for multi-band, software defined or cognitive radio transceivers. Passive LC filters show limited Q and tunability. Recently frequency translated filtering has been proposed as a potential solution direction for high Q filtering [1][2][3][4][5]. In [1,2] we showed that by applying the "N-path concept" 2[6], more than a decade of center frequency range with good linearity, compression point (P 1dB >0dBm, IIP3 >14dBm) and low noise is feasible for a bandpass (BP) filter. In [3] a notch filter with a combination of active and passive mixers is applied in a feedforward path realizing a BP filter.Moreover in [5] the low input impedance of a transimpedance amplifier with feedback is upconverted to create a notch filter at low frequencies (80MHz) suppressing TX leakage in an FDD system. In this work we explore the possibility to realize a notch filter applying the N-path concept at RF frequencies and in a completely passive way. A single-ended (SE) and a differential 8-path notch filter with passive frequency mixing are presented. The filters are power-matched in the input and output in the passband and provide a low insertion loss, high compression point and also low noise property, thus they can be utilized in front of a receiver to provide rejection of high power blockers with a large frequency tuning range. A prototype including a SE and a differential notch filter is implemented in 65nm CMOS technology (see Fig. 4.2.2 and 4.2.7). The circuit operates directly in a 50Ω system. In the differential architecture the notch is suppressed at the even harmonics of f s resulting in a wider passband. The second mixer in switches is set to 300mV to avoid reliability issues at high input swings). Larger switch would increase the insertion loss at high frequencies due to the parasitic capacitance and would require higher digital power drive. In the SE filter C 1 =7pF is chosen in each path targeting to suppress a 6MHz width blockers (e.g. TV channels in the cognitive radio or TV tuner applications). In the differential architecture two capacitors are in series and in order to get the same RC product as the SE version we have doubled the capacitor value (C 2 =14pF).For each filter, a divide-by-8 ring counter i...

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Power-Constrained Third-Order Active Notch Filter Applied in IR-LNA for UWB Standards

Cited by 24 publications

References 8 publications

A low‐power 3.2–9.7 GHz ultra‐wideband low‐noise amplifier with excellent stop‐band rejection using 0.18‐μm CMOS technology

A low‐power 3.2–9.7 GHz ultra‐wideband low‐noise amplifier with excellent stop‐band rejection using 0.18‐μm CMOS technology

Ultra-wideband CMOS low-noise amplifier with active interferer rejection

8-Path tunable RF notch filters for blocker suppression

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