Potential and problems of high-temperature electronics and CMOS integrated circuits (25–250°C) - an overview

A 14-bit high-temperature ΣΔ modulator in standard cmos

“…CMOS digital circuits have been shown to perform well at high temperature without special design techniques [3], [4]. Digital filtering and decimation, typically used to produce high resolution digital words from the single-bit output, was not implemented.…”

“…Insulated technologies prevent the reverse-biased diode leakage current that is problematic to designs in standard CMOS at high temperatures, as will be discussed. In standard CMOS, switched-capacitor circuits have been shown to be operational to temperatures as high as 275 C [4], [11]. Although such circuits were shown operational at very high temperature, they suffered from significant voltage droop during the hold phase due to increased switch leakage current.…”

“…The modulator is generally robust to several impairments that are expected at high temperature-such as decreased amplifier open-loop gain and increased comparator offset. Furthermore, the modulator achieves its high resolution by transferring complexity into the digital domain where high-temperature operation in standard CMOS has been shown to be successful without special design considerations [3], [4]. The two modulators designed for this research were implemented with fully differential switched-capacitor circuits in a 5-V 1.5-m double-poly standard CMOS process.…”

Wide-temperature range CMOS capacitance to digital convertor for MEMS pressure sensors

“…PMOS transistors are sized such that (W/L) p = ( n / p )(W/L) n to improve the linearity of the switch turn-on resistance. The digital blocks are implemented without special design considerations as standard CMOS digital circuits have been demonstrated operational at temperature around 300 • C [33].…”

A multifunctional integrated silicon tactile imager with arrays of strain and temperature sensors on single crystal silicon diaphragm

“…The output voltage of a temperature sensor corresponds to the voltage across the sensor resistor which is driven by a constant current source (DC biased MOSFET in saturation region). The current source MOSFET is biased at the point of ZTC (zero temperature coefficient) where the drain current becomes almost insensitive to temperature change as well known [24,25]. The output voltage of the resistive temperature sensor is expressed as Eq.…”