Postsurface Selenization for High Performance Sb 2 S 3 Planar Thin Film Solar Cells

et al. 2019

Global Challenges

Sb 2 S 3 has attracted great research interest very recently as a promising absorber material for photoelectric and photovoltaic devices because of its unique optical and electrical properties and single, stable phase. However, the intrinsic high resistivity property of Sb 2 S 3 material is one of the major factors restricting the further improvement of its application. In this work, the C 60 modification of Sb 2 S 3 thin films is investigated. The conductivity of Sb 2 S 3 thin films increases from 4.71 × 10 −9 S cm −1 for unmodified condition to 2.86 × 10 −8 S cm −1 for modified thin films. Thin‐film solar cells in the configuration of glass/(SnO 2 :F) FTO/TiO 2 /Sb 2 S 3 (C 60 )/Spiro‐OMeTAD/Au are fabricated, and the conversion efficiency is increased from 1.10% to 1.74%.

Section: Resultsmentioning

confidence: 99%

Enhanced Electrical Conductivity of Sb₂S₃ Thin Film via C₆₀ Modification and Improvement in Solar Cell Efficiency

Guo

et al. 2019

Global Challenges

“…[21] So the synthesized Sb 2 S 3 is selenized under Se atmosphere furtherly. Moreover, a postselenization is expected to passivate the sulfur vacancy and suppress the recombination loss.…”

Section: Growth Of Bandgap Gradient Sb 2 (Sse) 3 Filmmentioning

confidence: 99%

Over 6% Certified Sb₂(S,Se)₃ Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

Wang

et al. 2018

Adv Elect Materials

eV), [1][2][3] remarkable absorption coefficient (≈10 5 cm −1 ), [4,5] excellent stability, and low-toxicity component. To promote the power conversion efficiency, many methods have been successfully applied to fabricate Sb 2 (S x ,Se 1-x ) 3 solar cells. For example, the rapid thermal evaporation (RTE) method [6] have been gathered many attentions for the fabrication of Sb 2 Se 3 solar cells. Recently, Tang and co-workers used a novel vapor transport deposition (VTD) way to refresh the recorded efficiency of Sb 2 Se 3 solar cell to 7.6%, [7] which has been made a great progress since Sb 2 Se 3 was successfully achieved a power conversion efficiency (PCE) of 0.03% in 2002. [8] On the other hand, Choi et al. have achieved a PCE of 7.5% [9] for Sb 2 S 3 by chemical bath deposition (CBD). Although the VTD and CBD methods have achieved impressive efficiency over 7%, a number of processing issues arise in these approaches. For example, VTD deposition processes are complex and expensive. While the nonvacuums CBD method also has weaknesses such as (i) the film prepared from CBD method is tend to be amorphous; [8,10] (ii) the Sb 2 S 3 film prepared by CBD method is antimony rich which results in a higher mean coordination number (MCN) than the stoichiometric Sb 2 S 3 . It will make it too rigid to flatten out after the annealing step; [11] (iii) the Sb 2 S 3 film prepared by CBD method inevitably includes impurities such as SbOCl, Sb 2 O 3 , and Sb 2 (SO 3 ) 3 . [12][13][14] Meanwhile, although the crystalline of the film fabricated by RTE or VTD is promising, the compactness of the absorber needs a further improvement. Thus, seeking for an effective and easy-handle nonvacuum approach to improve Sb 2 (S x ,Se 1-x ) 3 thin film solar cells is urgently needed.Since the hydrothermal method is a useful method in thin film preparation, the quality and homogeneity of the film deposited by this method is remarkable, which is expected to be able to solve the problem mentioned above and cut down the cost of fabrication. Liu et al. have taken this method to prepare the Sb 2 S 3 thin films, but there is no device reported. [15] In our previous work, double buffer layer was used to tune the band align and reduce recombination, which has achieved V oc as high as 792 mV based on hydrothermal derived Sb 2 (S x ,Se 1-x ) 3 solar cell. [16] But the thick buffer layer (60 nm TiO 2 + 60 nm CdS) inevitably increases the R s of device and decreases the transmittance as well, both of which will reduce J sc and PCE. Besides, the formation mechanism for Sb 2 S 3 thin films based Antimony sulfide-selenide Sb 2 (S,Se) 3 as a promising absorber material has drawn extensive attention owing to its rewarding photoelectric properties, low toxicity, and earth abundant components. Here, an available and highly effective method, in situ hydrothermal growth accompanied with postselenization, is successfully applied to fabricate Sb 2 (S,Se) 3 solar cells. The rationale for the preparation of Sb 2 S 3 precursors by the hydrothermal method is discussed, and ...

“…Compared with the Sb 2 S 3 solar cells via the other methods mentioned above, the PCE of the thermal‐evaporated Sb 2 S 3 solar cells still remains much room to raise . Deng et al used rapid thermal evaporation and post‐surface selenization to modify the film quality of the evaporated Sb 2 S 3 absorbing layer, achieving an improved photovoltaic performance of devices . Thereby it is still critical to develop the preparation‐technique of high‐quality films for promoting the research progress of Sb 2 S 3 solar cells.…”

Section: Photovoltaic Parameters Of Best Sb2s3 Solar Cells (The Best mentioning

confidence: 99%

Microstructural and Optical Properties of Sb₂S₃ Film Thermally Evaporated from Antimony Pentasulfide and Efficient Planar Solar Cells

Physica Rapid Research Ltrs

Liang

Lan

et al. 2018

Antimony sulfide (Sb2S3) thin film is a promising light absorber for solar cell application due to its suitable bandgap, high absorption coefficient, and non‐toxic constituents. However, thermally evaporated Sb2S3 thin films experience sulfur loss during evaporation and post‐annealing, which do harm to the film quality and the performance of the devices. In this work, for the first time Sb2S3 thin films are prepared by thermally evaporating antimony pentasulfide (Sb2S5) precursor. The thermal and microstructural properties of Sb2S3 and Sb2S5 precursors are studied and compared. The crystallization of the Sb2S3 film (S‐5) prepared from Sb2S5 precursor is inferior to that (S‐3) from Sb2S3 powder. And the annealed S‐5 film shows a larger bandgap of 1.69 eV than S‐3. However, compared with S‐3, planar S‐5 thin film solar cells in the configuration of glass/(SnO2:F) FTO/TiO2/Sb2S3/Spiro‐OMeTAD/Ag exhibit an apparently improved photovoltaic performance, with the best power conversion efficiency of 3.75% and high fill factor of 0.56, which is the highest efficiency of thermally evaporated planar Sb2S3 solar cell. The capacitance–voltage (C–V) measurement indicates that this might come from the higher C–V derived space‐charge density in S‐5. This work offers a new method to prepare Sb2S3 thin films for efficient solar cells.