Enhanced Electrical Conductivity of Sb₂S₃ Thin Film via C₆₀ Modification and Improvement in Solar Cell Efficiency

Abstract

Sb 2 S 3 has attracted great research interest very recently as a promising absorber material for photoelectric and photovoltaic devices because of its unique optical and electrical properties and single, stable phase. However, the intrinsic high resistivity property of Sb 2 S 3 material is one of the major factors restricting the further improvement of its application. In this work, the C 60 modification of Sb 2 S 3 thin films is investigated. The conductivity of Sb 2 S 3 thin films increases from 4.71 × 10 −9 S cm −1 for unmodified condition to 2.86 × 10 −8 S cm −1 for modified thin films. Thin‐film solar cells in the configuration of glass/(SnO 2 :F) FTO/TiO 2 /Sb 2 S 3 (C 60 )/Spiro‐OMeTAD/Au are fabricated, and the conversion efficiency is increased from 1.10% to 1.74%.

Glassy and liquid Sb2S3: insight into the structure and dynamics of a promising functional material

“…The middle sub-band centered at −10.7 eV (g-Sb 2 S 3 ) or −10.0 eV (L-Sb 2 S 3 ) has predominantly the s-character as well as the low-energy part at approximately −15 eV. The bandgap for glassy ( E g = 2.28 eV) and liquid ( E g = 1.06 eV) antimony sesquisulfide are consistent with the reported optical data 1,76–79 and electrical measurements (Fig. 2).…”

“…75 The obtained results are consistent with the reported values of conductivity parameters and optical bandgap E g for bulk crystalline samples and amorphous or crystalline thin films, 1.5 r E g (c-Sb 2 S 3 ) r 1.8 eV and 2.0 r E g (a-Sb 2 S 3 ) r 2.4 eV. 1,[76][77][78][79] In addition, the conductivity seems to be intrinsic since 2E a D E g .…”

Wide Bandgap Sb2S3 Solar Cells

“…Therefore, compared with pristine-Sb 2 S 3 and other alkali metal-doped Sb 2 S 3 -based absorber solar cells, Cs-doped Sb 2 S 3 -based absorber solar cell attained the top efficiency of 6.56% (Figure 5d). Guo et al [61] modified the absorber Sb 2 S 3 with C 60 . XRD and transmittance spectra confirmed that modified films did not make any lattice distortions, but resulted in enhanced electrical conductivity and device performance.…”

Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

“…The peaks at ∼280 and 303 cm −1 can be assigned to the anti-symmetric Sb–S and symmetric stretching modes of Sb–S bonds, respectively. 35–39 Compared to the p-Sb 2 S 3 sample, a higher Raman peak intensity is noted at 303 cm −1 for Sb 2 S 3 –H 2 /Ar, an indication of enhanced symmetric Sb–S stretching due to reduced defect density. The Raman measurement of a single Sb 2 S 3 –H 2 /Ar rod at different positions was also performed (Fig.…”